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구분 연도 논문 피인용 원문
학술지
2022 Analysis of Temporal Carrier Build-up in Reconfigurable Field-effect Transistor   박정우   Electronics Letters, v.58 no.1, pp.35-37 0 원문
학술지
2021 In Situ Implementation of Silicon Epitaxial Layer on Amorphous SiO 2 Using Reduced-pressure Chemical Vapor Deposition   김상훈   Applied Materials Today, v.24, pp.1-7 4 원문
학술지
2018 NDR-effect Vertical-illumination-type Ge-on-Si Avalanche Photodetector   김경옥   Optics Letters, v.43 no.22, pp.5583-5586 8 원문
학술대회
2016 100 Gb/s Photoreceiver Module based on 4ch × 25 Gb/s Verticalillumination-type Ge-on-Si Photodetectors and Amplifier Circuits   주지호   Silicon Photonics XI (SPIE 9752), v.9752, pp.1-7 0 원문
학술지
2015 Single-Chip Photonic Transceiver Based on Bulk-Silicon, as a Chip-Level Photonic I/O Platform for Optical Interconnects   김경옥   Scientific Reports, v.5, pp.1-11 30 원문
학술지
2015 Silicon Photonic Receiver and Transmitter Operating Up to 36 Gb/s for λ~1550 nm   주지호   Optics Express, v.23 no.9, pp.12232-12243 24 원문
학술지
2014 Compact-Sized High-Modulation-Efficiency Silicon Mach-Zehnder Modulator Based on a Vertically Dipped Depletion Junction Phase Shifter for Chip-Level Integration   김경옥   Optics Letters, v.39 no.8, pp.2310-2313 23 원문
학술지
2013 High-Performance Photoreceivers Based on Vertical-Illumination Type Ge-on-Si Photodetectors Operating up to 43 Gb/s at λ~1550nm   김인규   Optics Express, v.21 no.25, pp.30718-30725 19 원문
학술대회
2013 High-performance Top-illumination Type Ge-on-Si Photodetectors Ready for Optical Network Applications   김인규   International Conference on Group IV Photonics (GFP) 2013, pp.79-80 2 원문
학술대회
2012 850nm 파장용 고감도 10Gbp 급 100% 게르마늄-온-실리콘 광 수신기   장기석   광전자 및 광통신 학술 회의 (COOC) 2012, pp.216-217
학술대회
2012 High-performance Vertical-illumination Type 100% Ge-on-Si Photodetectors Operating up to 50 Gb/s   김인규   European Conference on Optical Communication (ECOC) 2012, pp.1-3 0 원문
학술대회
2012 High-Performance Ge Photoreceivers Operating in the Wavelength Range of 850 nm~1550 nm   장기석   Opto-Electronics and Communications Conference (OECC) 2012, pp.829-830 1 원문
학술대회
2012 High-Speed High-Performance Vertical-Illumination Type 100% Ge-on-Si Photodetectors for Optical Data Communications   김인규   Opto-Electronics and Communications Conference (OECC) 2012, pp.527-528 0 원문
학술대회
2012 파장 1310nm~1550nm 광통신용 고성능 100% 게르마늄-온-실리콘 광수신기   김인규   광전자 및 광통신 학술 회의 (COOC) 2012, pp.206-207
학술지
2011 Low-Voltage High-Performance Silicon Photonic Devices and Photonic Integrated Circuits Operating up to 30 Gb/s   김경옥   Optics Express, v.19 no.27, pp.26936-26947 76 원문
학술대회
2011 Progress in High-responsivity Vertical-illumination Type Ge-on-Si Photodetecor Operating at λ ~1.55 μm   주지호   Optical Fiber Communication Conference and Exposition (OFC) 2011 / National Fiber Optic Engineers Conference (NFOEC) 2011, pp.1-3
학술지
2010 High-Sensitivity 10 Gbps Ge-on-Si Photoreceiver Operating at λ ~ 1.55 um   주지호   Optics Express, v.18 no.16, pp.16474-16479 38 원문
학술지
2009 Biosensors using the Si Banochannel Junction-Isolated from the Si bulk Substrate   안창근   Journal of Applied Physics, v.106 no.11, pp.1-6 6 원문
학술대회
2009 Ge/Si(100) Photodetector based on High-Quality Epitaxial Germanium Deposited by RPCVD   김상훈   MRS Meeting 2009 (Fall), pp.1-2
학술대회
2009 High-Speed RPCVD Ge Waveguide Photodetector   서동우   International Conference on Group IV Photonics (GFP) 2009, pp.16-18 3 원문
학술지
2009 36-GHz High-Responsivity Ge Photodetectors Grown by RPCVD   서동우   IEEE Photonics Technology Letters, v.21 no.10, pp.672-674 29 원문
학술지
2009 Fabrication of P-Type ZnO Thin Films Using Rf-Magnetron Sputter Deposition   김준관   Electrochemical and Solid-State Letters, v.12 no.4, pp.H109-H112 15 원문
학술대회
2008 35 GHz Ge p-i-n Photodetectors Implemented Using RPCVD   서동우   International Conference on Group IV Photonics (GFP) 2008, pp.191-193 5 원문
학술대회
2008 Ge-on-Si Photodetectors with 33 GHz Bandwidth Implemented by RPCVD   서동우   European Conference on Optical Communication (ECOC) 2008, pp.1-2 0 원문
학술지
2008 New Fabrication of a Strained Si/Si1_yGey Dual Channel on a Relaxed Si1_xGex Virtual Substrate using a Ge-rich Layer Formed by Oxidation   김상훈   Applied Surface Science, v.254 no.19, pp.6025-6029 1 원문
학술지
2007 Silicon-based Thin Films as Bottom Electrodes in Chalcogenide Nonvolatile Memories   이승윤   Applied Surface Science, v.254 no.1, pp.312-315 3 원문
학술대회
2007 Stability of Phosphorusdoped p-ZnO Thin Films   김준관   International Conference on Solid State Devices and Materials (SSDM) 2007, pp.1-2
학술지
2007 Low Power and High Speed Phase-change Memory Devices with Silicon-germanium Heating Layers   이승윤   Journal of Vacuum Science and Technology B, v.25 no.4, pp.1244-1248 15 원문
학술대회
2007 Cost Effective Parallel-branch Spiral Inductor with Enhanced Quality Factor and Resonance Frequency   배현철   Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) 2007, pp.87-90 1 원문
학술대회
2007 A Concurrent Dual-Band VCO with Dual Resonance in Single Resonator   이자열   Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) 2007, pp.135-138 5 원문
학술대회
2006 Structure Optimization of Strained Si/Si1-yGey Dual-Channel Heterostructures on Relaxed Si1-xGex (x   김상훈   MRS Meeting 2006 (Fall), pp.1-2
학술대회
2006 SiGe BiCMOS Technology for High Speed Communications   이상흥   Workshop on SiGe and Related Semiconductor 2006, pp.1-23
학술지
2006 Structure-related Characteristics of SiGe HBT and 2.4 GHz Down-Conversion Mixer   이상흥   Journal of Semiconductor Technology and Science, v.6 no.2, pp.114-118
학술대회
2006 Q 인자 특성을 개선한 병렬 분기형 인덕터   배현철   대한전자공학회 종합 학술 대회 (하계) 2006, pp.547-548
학술대회
2006 A Wideband Fully Integrated SiGe BiCMOS Medium Power Amplifier   배현철   한국반도체 학술 대회 (KCS) 2006, pp.1-2
학술대회
2006 Structure-Related Characteristics of SiGe HBT and 2.4 GHz Down-Conversion Mixer   이상흥   한국반도체 학술 대회 (KCS) 2006, pp.1-2
학술대회
2006 A Single-Resonator Dual-Band VCO without Band-Selection Switch   이자열   한국반도체 학술 대회 (KCS) 2006, pp.1-2
학술지
2005 Strain Relaxed SiGe Buffer Prepared by Means of Thermally Driven Relaxation and CMP   김상훈   Electrochemical and Solid-State Letters, v.8 no.11, pp.G304-G306 5 원문
학술대회
2005 A Novel Method to Fabricate Recessed SiGe Source/Drain using a selective Si and SiGe Epitaxial Growth without Etching Process   김상훈   MRS Meeting 2005 (Fall), pp.1-2
학술대회
2005 Characteristics of SiGe device fabricated by SiGe BiCMOS technology and its application to a 5.8 GHz MMIC down-conversion mixer   이상흥   Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) 2005, pp.232-235 원문
학술지
2005 DSRC 송신기를 위한 능동발룬 내장형 5.8 GHz SiGe 상향믹서 설계 및 제작   이상흥   한국통신학회논문지, v.30 no.4A, pp.350-357
학술지
2003 Effects of High-dose BF2 + Implantation on the Formation of Ti-germanosilicide on Polycrystalline Si/Si0.87Ge0.13/Si Layers   박찬우   Journal of Vacuum Science and Technology B, v.21 no.5, pp.2193-2197 원문
학술대회
2003 A 5.8 GHz up-conversion mixer for DSRC transmitter   이상흥   Radio and Wireless Conference (RAWCON) 2003, pp.369-372 1 원문
학술대회
2003 A packaged. 2.3 GHz SiGe VCO with parallel-branch inductors   이자열   International Microwave Symposium (IMS) 2003, pp.A141-A144 원문
학술지
2003 1/f noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under Fowler-Nordheim stress   송영주   IEEE Transactions on Electron Devices, v.50 no.4, pp.1152-1156 12 원문
학술대회
2002 SiGe HBT 의 VBIC 모델을 위한 변수 추출 및 최적화   이상흥   한국통신학회 종합 학술 발표회 (추계) 2002, pp.1665-1668
학술대회
2002 A SiGe HBT differential MMIC VCO for PCS Application   이자열   한국통신학회 종합 학술 발표회 (하계) 2002, pp.267-270
학술대회
2002 RF performance tradeoffs of SiGe HBT fabricated by reduced pressure chemical vapor deposition   민봉기   International Microwave Symposium (IMS) 2002, pp.413-416 3 원문