ETRI-Knowledge Sharing Plaform

4h-Sic High Performance Fabrication Process Silicon Carbide(3C-SiC) Trench Gate Breakdown Voltage(BDV) Schottky Barriers(SBs) Schottky Barrier Diode(SBD) Process Conditions 700 V Gate Dielectric Power Semiconductor Etch Rates Large Area Response Characteristics Bosch Process Silicon Sensors Electrical Properties(I-V curve) Measurement Results P-I-N Photodiodes(PDs) Stray Inductance Wire Bonding Pin Diode High Current Through Silicon Vias(TSV) Multilayer Circuit Oxidation Process Power Inductor Replica Mold Spectral Range Dc-Dc Converters Fully Depleted(FD) Ion Implantation Silicon Substrate Field Emission Scanning Electron Microscopy(FESEM) Nano-Scale Patterning Technique Edge Termination Turn-Off Low Voltage Near-Ir Power Losses Depletion Width Scanning Electron Microscope Design And Fabrication Performance Analysis Power Factor Correction Converter Silicon Wafer Human Teeth Block Assembly Potential Distribution Silicon Detector High Reliability Class B Input Voltage Micro-Electro-Mechanical System(MEMS) Merged Pin Schottky Diode Parasitic Effects Pulse Power Pixel Readout Sic Sbd Vertical Electrodes Blocking Voltage Channel Length Double-Sided Exposure Time Imaging Device Interface Trap Density Low-Cost Mach-Zehnder(MZ) Simulation Results X-Ray Image Via Filling High Voltage CMOS IC Dry Etching Input Power Power Diode Power Factor Correction (Pfc) Converter Reverse Leakage Current Commercial Products Etch Profile Deep Trench Capacitor Ir Spectral Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) Power Conversion System Surge Current Template Fabrication High-Power Applications High-Resolution Applied Physics Etching Process Film Thickness Turn-On Voltage Patterning Technology Process Pressure Sic Mosfet Single-Sided Switching Characteristics Sio 2 Source Power X-Ray Imaging Vanadium Oxide High-Density High Aspect Ratio Auger Electron Spectroscopy Dbc Substrate Electromagnetic Interference Flow Rate Ionizing Radiation(IR) Photo Response Reverse Recovery Charge Reliability Test Semiconductor Package Self-Aligned Silicon Pixel Detector Thermal Oxidation High Efficiency Electrical Resistance Flat-Band Voltage Theoretical And Experimental Analysis Low Current N-Type Silicon Water Contact Angle Uv Light Hvdc Transmission High-Purity Heat Dissipation Acceleration Voltage Adaptively Coupled Plasma Current Capacity Bond Wire Conformal Deposition Coulomb Scattering Chemical Sensor C-V Characteristics Design And Development Processes Doping Process Each Region Etch Mechanism Electrode Structure Electron Beam Irradiation Experimental Design Etch Selectivity Filling Method Gas Composition Isolation Technique Intrinsic Layer Trench Power Mosfets Temperature Humidity Bias(THB) Low Temperature Co-Fired Ceramic (Ltcc) Substrate Load Conditions Load Regulation Load Change Low Shrinkage Line Width Nano-Sized Nitrogen-Rich Nuclear Energy Organic Solvents On-Chip On-State Characteristics Physical Mechanism Parasitic Capacitance Process And Device Simulation Power System Application Photo-Curable Photonic Devices Phase Shifter Photo-Initiator Pumping Speed Resistive Component Rapid Thermal Annealing(RTA) Response Time Radio Frequency(RF) Rated Power Super-Junction Solution Process Step Coverage Vertical Profile Transmission Line Tapered Via Trench Etching Level Shifter Pentacene Field-Effect Transistors Pecvd Oxide High-Quality High Doping Concentration An Inverter Crystal Orientation Critical Dimension Charge Balance Ceramic Substrate Curing Temperature Degradation Rate Dc-Type Direct Oxidation Dielectric Stability Dc Bias Voltage Epitaxy Growth Electric Energy Electrode Spacing Forward Current Full-Load Influential Factor Insulator Layer Ion Bombardment Index Terms Temperature Coefficient Of Resistance(TCR) Lead Free Solder Alloy Low Threshold Voltage Voltage Performance Low Concentration Mems-Based Master Mold Metal-Insulator-Semiconductor Capacitor Mos Devices Microcontact Printing(CP) New Technology Nano-Ag Optical Radiation N /Cl /Ar 2 2 Optical Interconnect(OI) P-Type Doping Pn Junction Diode P-Type Dopant Penetration Depth Plasma Enhanced Cvd Photonic Interconnects Quality-Factor(Q-factor) Rise Time Recovery Current Schottky Junction Simulation And Measurement Semiconductor Manufacturing Subthreshold Region Saturation Current S-Band Sub-30 Nm Structures X-Ray Photoelectron Spectroscopy (Xps) Fast Response Subthreshold Characteristics Signal-To-Noise Position Resolution High Stability High Modulus High Temperature Storage Hf-Silicate High Elastic Modulus Annealing Process Anode And Cathode Ag Ink Boron Implantation Breakover Diode Boron Diffusion Cross Regulation Cross-Linking Density Cost-Effective Constant Pressure Dynamic Load Direct Bonded Copper(DBC) Drain Current Experimental Measurements Extraction Method Electric Bike Experimental Data Energy Barrier Height Focused Ion Beam Graphene Field-Effect Transistors Infrared (Ir) Sensor Glucose Detection Inductively-Coupled Plasma(ICP) Ic Chips Junction Termination Extension(JTE) Insertion Loss Line-And-Space Lateral Igbt Mixing Ratio Numerical Simulations Output Stability Oxide Thin Films Optical Loss Oxide Etching Off-State Potential Gradient Printed Circuit Board(PCB) Plasma Etching Process Simulation Postdeposition Annealing(PDA) Radiation Detector Sensor Design Reduced Pressure Chemical Vapor Deposition Silicon Semiconductor Size Reduction Silicate Glasses Silicon Deep Etching Sub-50 Nm Silicon Photonics Soi Wafer Silicon Waveguide Vanadium Pentoxide 1200 V Thin Silicon Energy Conversion 4-Vinyl Phenol(Poly) UV-NIL Unit Cell Hydrogen Silsesquioxane Average Efficiency Clip Bonding Chemical Mechanical Polishing(CMP) Dual Output Driving Capability Differential Drive Equivalent Oxide Thickness Etching Conditions Excess Charge Graphene Fets Ir Intensity Input And Output Ion Flux Thermal Cycling Thin Wafer Loss Characteristics Light Pulse Light Triggered Thyristor Multi-Purpose Optical Network Optical Lithography Parallel Lines Post Oxidation Process Parameters Process Factors Process Complexity Polyurethane-Acrylate Resistance Change Rf Power Switching Loss Storage Life Surface Mount Device Static And Dynamic Performances Space Charges Space Charge Region Structural And Electrical Characteristics X-Ray Microscope 22 Nm Vacuum-Assisted Trench Isolation Thermal Initiator 65 Nm Multilayer Inductor Charge Carriers Wire-Bonded High Resistivity High Energy Physics Half-Bridge Power Module High Durability High Throughput(HTP) Ag Paste Aluminum Wires Bonding Structure Critical Voltage Complementary Metal-Oxide-Semiconductor(CMOS) Coupled Waveguide Dental Radiography Fabrication And Characterization Design Considerations Drying Time Direct Writing E-Beam Lithography Electric Field Distribution Electrical Response Filling Properties Forming Processes Gate Bias Infrared Spectrometer Grain Boundaries Gate Voltage Grating Structure Interfacial Layer Interface Characteristics Line Regulation Low Electric Field Micro-Spectrometer Multi-Layer Substrate Monolithically Integrated Nano-Patterning Near-Infrared(NIR) Oxide-Semiconductor Field-Effect Transistors Output Current Output Ripple Power Limiter Power Rectifier Process Research Photonic Integrated Circuits(PICs) Parylene-C Release Agent Reflection Loss Schottky Contacts Silicon Micromachining Simulation Study Simulation And Experiment Switching Operation Signal Noise Ratio(SNR) 3-Phase Inverter 3d Interconnection 20 Nm Voltage Sweep Vacuum Drying Thick Copper Smart Power Ic Ar Plasma High Mechanical Properties Avalanche Photo Diode(APD) Boron Doping Block Copolymer Bubble Defects Conduction Loss Cathode Region Capacitance-Voltage Cl 2 Chemical Etch Diffusion Process Cmos-Compatible Dirac Point Voltage Direct Current Resistance(DCR) Drift Velocity Diffusion Temperature FE-AES Ir Detector Intensity Based Thermionic-Field Emission Low Parasitic Inductance Linear Characteristic Low Pressure Micro-Features Low Dark Current Material Approach Minority Carrier Microstrip Sensor Non-Doped NH 3 Neural Networks Power Signal P-Doping Peak Current Potential Applications Poly-Silicon Reverse Voltage Reverse Bias Switching Frequency Reactive Etching Relativistic Heavy Ion Collider Surface Defects Schottky Rectifiers Slope Control Smooth Surface Surface Characteristics Snap-Back Semiconductor Integrated Specific On-Resistance Sheet Resistance Wavelength Components Travelling Wave Wide Range Ultraviolet Nanoimprint Lithography Pulsed Power Anisotropic Wet Etching Bcd Technology Blocking Capability By-Products Boron Concentration Critical Rate Computer Vision(CV) Double-Pulse Dynamic Test Extinction Ratio Efficiency Improvement Form Factor Infrared Sensor Glucose Concentration Gas Plasma Gas Pressure Triple-Gate Low Forward Voltage Drop Lateral Dimensions Localized Trap States Koh Solution Laser Annealing Low Energy Multi-Scale Manufacturing Cost Mems Microphone N-Channel Noise Mitigation N 2 Operating Conditions Off-Chip Optical Transmission Power Converter Pentacene Film Potential Barrier Power Electronics Photonic Circuits Re-Oxidation Region Area Radiation Response Rf Receiver Semiconductor Detectors Sensor Concept Small Size Remote Plasma Nitridation Sic Power Devices Sic Device Switching Device Static And Dynamic Characteristics Semiconductor Packaging Slope Angle Silicon Nitride Surface Design 2 Mm Uv Transparency High Resistance High Water High-Capacity Hfo 2 Hfo X High-K Dielectric Additive Effect Center Point Charge Generation Charge Density Cross-Linked Pvp Dual Stack Device Packaging Deep Reactive Ion Etching Electrical Engineers Effective Dielectric Flow Ratio Good Isolation Ge-On-Si Gas Exposure Gas Permeability Interference Test Gas Mixture Inductance Extraction Interface Properties Ir Filter Low Switching Low Loss Loading-Unloading Lateral Diffusion Low Surface Energy Mos Capacitor Medical Imaging Manufacturing Processes Modulation Efficiency On-State Current Output Voltage Nanoindentation Method Organic Thin-Film Transistors Polycrystalline Silicon(poly-Si) Pulse Generator Physical Contact Reverse Blocking Rate Of Rise Rough Surfaces Schottky Interface Supply Voltage Si Substrate Si Etching Single-Chip Source Region Surface Pattern 3.5 Ghz 2d Simulation