ETRI-Knowledge Sharing Plaform

Normally-Off Gan-Based Algan/Gan Heterostructure Sapphire Substrates Gan Heterostructures Schottky Barrier Diode(SBD) High Electron Mobility Transistor(HEMT) Field Plate Recess Depth Drain Current Thin Film Solar Cells Semiconductor Device Dry Etching Leakage Current Power Density Stimulated Emission Crack-Free Ultraviolet Laser Diode Proton Radiation Recessed Gate Boron Nitride(BN) Low-Rate Release Layer Waveguide Structure Gate Dielectric Mole Fraction Recent Progress Etching Conditions Rf Power Thermal Properties Cvd Diamond Multi-Purpose Fabrication And Characterization Transfer Technique Bi-Layer Current Density Iii-Nitrides Silicon Substrate Thermal Behavior Light-Emitting Diodes (Leds) Carrier Mobility Gan Fet Gate Recess Patterned Sapphire Substrate Breakdown Voltage(BDV) Radiation Hardness Cu Film Mqw Structure Maximum Frequency Optoelectronic Devices Power Electronics Structural Parameters Stop Layer Temperature Optimization Thermal Conductivity Technology Trends Various Substrates Blocking Voltage Dual Gate(DG) Drain Voltage Dielectric Layer Enhancement-Mode Forward Voltage Method Growth Mode Interface Trap Density Large Area X-Ray Topography Metalorganic Chemical Vapor Deposition Multi-Step Optical Pumping Subband Energies Surface Treatments Surface Oxide Simulation Results Smooth Morphology Substrate Effects Self-Heating Effect(SHE) Current Gain Cutoff Frequency Al Thin Films Blue Leds Aln Substrate Metal-Organic Chemical Vapour Deposition(MOCVD) Photoluminescence Characteristics Relative Ratio Performance Degradation Power Transistor Rear Surface Spectral Properties Second Step Schottky Contacts Solar Cell Efficiency Systematic Study Thermal Characteristics Thermal Resistance Theoretical Model Ultraviolet A Capacitance-Voltage Characterization(CV) Etch Rates Key Device Wafer Dicing Vertical Growth Various Conditions Cds Film Cigs Solar Cell Degradation Factor Diamond Heat Spreader Exchange-Correlation Fin-Gate Low Pressure Mocvd Growth Maximum Output Power Maximum Oscillation Frequency Numerical Methods Plasma Damage Selective Area Growth Structure Parameters Surface Texturing Sheet Resistance Temperature-Dependent Crossing Effect Green Led Insertion Layer Metal-Oxide-Semiconductor Structures Computer Vision(CV) Access Region Efficiency And Power Electrical Characteristics Growth Rate Gan Substrate Gate Insulator Hetero-Interface Insulating Layer Indium Tin Oxide(ITO) Laser Lift-Off Large Chip Current Collapse Power Semiconductor Rf Properties Single Crystal Tetramethylammonium Hydroxide Three Dimensional(3D) Trapped Charge Technology Infrastructure Dissipation Model Experimental Data High-Power Applications Inductively-Coupled Plasma(ICP) 525 Nm Annealing Process Mini-Modules Optical Confinement Factor Off-State Leakage Wafer-Scale Diamond Substrate Floating Gate Infrastructure Support Low Damage Model-Based Optically Pumped Polarization Effect Surface Traps Surface Mount Device Short-Circuit Current Single-Layer Surface Reflection UV-LED Atomic Layer Deposition Method Voltage Characteristics Metal-Insulator-Semiconductor(MIS) Multi-Quantum-Well Pulsed Mode Spontaneous Polarization Uv Laser Area Light As 2 Algan/Gan Hemts Device Performance Efficiency Enhancement Fluorine Ions Gate Voltage Green Light High Efficiency Gan-On-Diamond Gan Device I-Zno Wave Equation Open Technology V/Iii Ratio C-V Characteristics Characteristic Temperature Absorption Coefficient Doping Density Defect Analysis Electron Temperature Electrical Properties(I-V curve) Gan Mis-Hemt Heat Dissipation Gan Films Injection Current Critical Defects Stress Measurement Turn-On Threshold Voltage Coulomb Scattering Etch-Stop Gan Surface Gan Templates Low Growth Temperature Ultraviolet Light-Emitting Diodes Window Layer Co. Kgaa Dislocation Density Finite Element Method(FEM) Guided Modes Growth And Characterization High Performance Lateral Growth Fine Control Plasma Treatment Property Improvement Two-Step Ultraviolet (Uv) Light-Emitting Diodes Control Gate Gan On Sic Junction Temperature Interfacial Properties Plasma-Assisted Self-Consistent Crystal Quality Drain Electrode Etching Rate Gan Power Device Highly Efficient High Voltage Applications Ingan/Gan Multiple Quantum Well High Temperature Characterization 10 Ghz Electronic Materials