ETRI-Knowledge Sharing Plaform

Normally-Off Gan-Based Algan/Gan Heterostructure Sapphire Substrates Gan Heterostructures Schottky Barrier Diode(SBD) High Electron Mobility Transistor(HEMT) Thin Film Solar Cells Drain Current Field Plate Recess Depth Semiconductor Device Radiation Hardness Dry Etching Ultraviolet Laser Diode Leakage Current Power Density Stimulated Emission Boron Nitride(BN) Low-Rate Proton Radiation Recessed Gate Release Layer Waveguide Structure Gate Dielectric Mole Fraction Recent Progress Cvd Diamond Thermal Properties Etching Conditions Multi-Purpose Rf Power Bi-Layer Transfer Technique Fabrication And Characterization Current Density Thermal Behavior Iii-Nitrides Light-Emitting Diodes (Leds) Silicon Substrate Carrier Mobility Gan Fet Gate Recess High Power Applications Patterned Sapphire Substrate Crack-Free Absorption Coefficient C-V Characteristics Characteristic Temperature Critical Defects Coulomb Scattering Doping Density Defect Analysis Turn-On Threshold Voltage V/Iii Ratio Ultraviolet Light-Emitting Diodes Electron Temperature Electrical Properties(I-V curve) Etch-Stop Gan Surface Heat Dissipation Gan Mis-Hemt Gan Templates Gan Films Injection Current Low Growth Temperature Stress Measurement Two-Step Control Gate Co. Kgaa Dislocation Density Junction Temperature Ultraviolet (Uv) Light-Emitting Diodes Window Layer Fine Control Finite Element Method(FEM) Growth And Characterization Gan On Sic Guided Modes High Performance Interfacial Properties Lateral Growth Plasma Treatment Pin Diode Plasma-Assisted Property Improvement Self-Consistent Three Dimensional(3D) Annealing Process Crystal Quality Drain Electrode Dissipation Model Trapped Charge 10 Ghz Technology Infrastructure Tetramethylammonium Hydroxide Experimental Data Electronic Materials Etching Rate Gan Power Device High Temperature Characterization High Breakdown Voltage High Voltage Applications Highly Efficient Inductively-Coupled Plasma(ICP) Ingan/Gan Multiple Quantum Well Mini-Modules Optical Confinement Factor Off-State Leakage Power Semiconductor 525 Nm Rf Properties Single Crystal Atomic Layer Deposition Method Diamond Substrate Uv Laser Voltage Characteristics UV-LED Wafer-Scale Floating Gate Infrastructure Support Low Specific On-Resistance Low Damage Metal-Insulator-Semiconductor(MIS) Multi-Quantum-Well Model-Based Optically Pumped Polarization Effect Pulsed Mode Surface Traps Surface Mount Device Spontaneous Polarization Short-Circuit Current Surface Reflection Single-Layer Thermal Characteristics Thermal Resistance As 2 Area Light Algan/Gan Hemts Capacitance-Voltage Characterization(CV) Device Performance Theoretical Model Ultraviolet A Wave Equation Fluorine Ions Efficiency Enhancement Etch Rates Gate Voltage Green Light Gan-On-Diamond Gan Device High Efficiency I-Zno Key Device Low Contact Resistance Power Transistor Open Technology Performance Degradation Spectral Properties Rear Surface Second Step Schottky Contacts Solar Cell Efficiency Systematic Study Temperature-Dependent Crossing Effect Cds Film Cigs Solar Cell Degradation Factor Diamond Heat Spreader Various Conditions Vertical Growth Metal-Oxide-Semiconductor Structures Wafer Dicing Exchange-Correlation Green Led Fin-Gate Insertion Layer Low Pressure Maximum Output Power Mocvd Growth Maximum Oscillation Frequency Numerical Methods Plasma Damage Structure Parameters Selective Area Growth Surface Texturing Sheet Resistance Temperature Optimization Computer Vision(CV) Access Region Current Collapse Cu Film Thermal Conductivity Efficiency And Power Hetero-Interface Electrical Characteristics Growth Rate Gate Insulator Gan Substrate Insulating Layer Indium Tin Oxide(ITO) Large Chip Laser Lift-Off Maximum Frequency Mqw Structure Optoelectronic Devices Power Electronics Structural Parameters Stop Layer Al Thin Films Aln Substrate Current Gain Cutoff Frequency Dual Gate(DG) Drain Voltage Dielectric Layer Blocking Voltage Blue Leds Technology Trends Various Substrates Photoluminescence Characteristics Subband Energies Enhancement-Mode Forward Voltage Method Growth Mode Interface Trap Density Large Area X-Ray Topography Metal-Organic Chemical Vapour Deposition(MOCVD) Metalorganic Chemical Vapor Deposition Multi-Step Optical Pumping P-Type Gan Relative Ratio Surface Treatments Surface Oxide Simulation Results Smooth Morphology Substrate Effects Self-Heating Effect(SHE)