ETRI-Knowledge Sharing Plaform

Normally-Off Gan-Based Algan/Gan Heterostructure Sapphire Substrates Gan Heterostructures Schottky Barrier Diode(SBD) High Electron Mobility Transistor(HEMT) Thin Film Solar Cells Semiconductor Device Drain Current Field Plate Recess Depth Radiation Hardness Crack-Free Dry Etching Leakage Current Power Density Stimulated Emission Recessed Gate Boron Nitride(BN) Low-Rate Proton Radiation Release Layer Waveguide Structure Gate Dielectric Mole Fraction Recent Progress Thermal Properties Multi-Purpose Cvd Diamond Etching Conditions Rf Power Bi-Layer Transfer Technique Fabrication And Characterization Thermal Behavior Current Density Iii-Nitrides Light-Emitting Diodes (Leds) Silicon Substrate Breakdown Voltage(BDV) Carrier Mobility Gate Recess Gan Fet Patterned Sapphire Substrate Ultraviolet Laser Diode Absorption Coefficient Turn-On Threshold Voltage Electrical Properties(I-V curve) V/Iii Ratio Ultraviolet Light-Emitting Diodes C-V Characteristics Characteristic Temperature Critical Defects Coulomb Scattering Doping Density Defect Analysis Electron Temperature Etch-Stop Gan Mis-Hemt Gan Templates Gan Surface Heat Dissipation Gan Films Injection Current High Voltage Low Growth Temperature Stress Measurement Window Layer Two-Step Ultraviolet (Uv) Light-Emitting Diodes Control Gate Co. Kgaa Dislocation Density Junction Temperature Finite Element Method(FEM) Fine Control Guided Modes Gan On Sic Growth And Characterization High Performance Interfacial Properties Lateral Growth Plasma Treatment Plasma-Assisted Property Improvement Self-Consistent Annealing Process Tetramethylammonium Hydroxide Three Dimensional(3D) Dissipation Model 525 Nm Technology Infrastructure Trapped Charge Crystal Quality Drain Electrode Experimental Data Electronic Materials Etching Rate Highly Efficient High-Power Applications High Temperature Characterization Ingan/Gan Multiple Quantum Well Inductively-Coupled Plasma(ICP) Mini-Modules Optical Confinement Factor Off-State Leakage Power Semiconductor Rf Properties 10 Ghz Single Crystal Atomic Layer Deposition Method Wafer-Scale Uv Laser Voltage Characteristics UV-LED Diamond Substrate Floating Gate Infrastructure Support Low Damage Multi-Quantum-Well Model-Based Metal-Insulator-Semiconductor(MIS) Optically Pumped Polarization Effect Pulsed Mode Surface Traps Surface Mount Device Spontaneous Polarization Short-Circuit Current Surface Reflection Single-Layer Area Light As 2 Algan/Gan Hemts Wave Equation Theoretical Model Thermal Resistance Ultraviolet A Capacitance-Voltage Characterization(CV) Efficiency Enhancement Device Performance Etch Rates Fluorine Ions Gate Voltage Green Light Gan-On-Diamond High Efficiency Gan Device Key Device I-Zno Open Technology Power Transistor Performance Degradation Rear Surface Second Step Schottky Contacts Spectral Properties Solar Cell Efficiency Systematic Study Various Conditions Temperature-Dependent Cds Film Degradation Factor Vertical Growth Crossing Effect Cigs Solar Cell Diamond Heat Spreader Exchange-Correlation Green Led Fin-Gate Insertion Layer Low Pressure Mocvd Growth Metal-Oxide-Semiconductor Structures Maximum Output Power Maximum Oscillation Frequency Numerical Methods Plasma Damage Selective Area Growth Structure Parameters Surface Texturing Sheet Resistance Wafer Dicing Access Region Temperature Optimization Thermal Characteristic Thermal Conductivity Computer Vision(CV) Cu Film Current Collapse Efficiency And Power Electrical Characteristics Growth Rate Gan Substrate Gate Insulator Hetero-Interface Indium Tin Oxide(ITO) Large Chip Insulating Layer Laser Lift-Off Mqw Structure Maximum Frequency Optoelectronic Devices Power Electronics Structural Parameters Stop Layer Al Thin Films Aln Substrate Various Substrates X-Ray Topography Surface Treatments Metalorganic Chemical Vapor Deposition Blue Leds Blocking Voltage Technology Trends Current Gain Cutoff Frequency Dual Gate(DG) Drain Voltage Dielectric Layer Enhancement-Mode Forward Voltage Method Growth Mode Interface Trap Density Large Area Metal-Organic Chemical Vapour Deposition(MOCVD) Multi-Step Optical Pumping Photoluminescence Characteristics Relative Ratio Surface Oxide Simulation Results Subband Energies Smooth Morphology Substrate Effects Self-Heating Effect(SHE)