ETRI-Knowledge Sharing Plaform

Schottky Barrier Diode(SBD) Breakdown Voltage(BDV) Normally-Off Algan/Gan-On-Si High Electron Mobility Transistor(HEMT) Sacrificial Layer Forward Current Noise Level Reverse Leakage Current Field-Effect Transistors(FETs) Acoustic Sensor Bottom Electrode Power Semiconductor Acoustic Device High Thermal Conductivity Channel Width Electrical Characteristics Field Plate Micro-Electro-Mechanical System(MEMS) Dry Etching Piezoelectric Membrane Silicon Nitride Membrane Temperature Test Gaas Substrates Zero-Bias Maximum Deflection Depletion Mode High Performance 4h-Sic Power Conversion System Plasma Treatment Silicon Carbide(3C-SiC) Etching Process Low Temperature Cofired Ceramic(LTCC) Piezoelectric Thin Film Printed Circuit Board(PCB) Trade-Off Chemical Mechanical Polishing(CMP) Communication Technologies Forward And Reverse Ltcc Substrate Reverse Recovery Charge Si Wafer Switching Loss Sound Pressure Level Dc-Dc Converters Gate Bias Low Noise Amplifier(LNA) Zinc Oxide(ZnO) Pfc Converter Surface Passivation Algan/Gan Hfet Boost Converter High Power Conversion Efficiency Laser Doppler Vibrometer Gate Recess Integrated Process 2 Mm Power Electronics Structural Changes Surface Micromachining Conversion Systems Enhancement-Mode Low Turn-On Voltage Low Stress Vacuum Pump Water Pressure Components Technology Device Structure Design Evaluation Design Rule Drop-Coating Energy Loss Electroplated Cu Gate Electrode Ground-Signal-Ground Heat Sink High-Efficiency Converter High Voltage Heat Control Heat Dissipation Rate Gap Structures Ict Convergence Low Leakage Current Load Conditions Working Temperature Mechanical Vibration High Gain MOS-HEMT Major Switching Multi-Frequency Metal Plate Mass Spectrometry Analysis Metal Oxide Semiconductor N-Type Optical Axis Platform-Based Temperature Humidity Bias(THB) Membrane Diameter Off-State Stress Resistance Ratio Sub-Ppm Thermal Conduction Third-Order Intercept Point Ultra-Thin Vibration Environment Vibration Exciter Chip Package Air-Gap Activation Ratio Algan/Gan Mis-Hemt Au Nanoparticles(Au-NPs) Bias Circuit Battery Voltage Built-In Voltage Bipolar Junction Transistor Dopant Activation Field Metal Gate Fabrication Gate Leakage Full-Load Gan On Sic Heat Pipe In-Situ Low-Rate Gan Hfets 700 V Need For On-Resistance Oxide Etch Passive Alignment Polymer Composites Recessed Gate Sandwich Structure Sic Surface Treatment Process Cascode Gan Fet Cascode Structure Continuous Wave(CW) Carbon Black Cost-Effective Axis Alignment Built-In Potential Drain Current Electrical Signal Forward Voltage First Stage Electric Bike Heat Flux High Temperature Storage Led Lighting 5 Nm 900 V Metal Ring Multilayer Circuit National Defense Operating Temperature Planar Lightwave Circuit(PLC) Thermal Vias Promotion Strategy Reverse Current Sintered Wick Silicon Membrane Substrate Surface Sensing Electrodes Smd Package Synchronous Buck Threshold Voltage(Vth) Through Silicon Vias(TSV) Thermal Stress Support Project Smart Lighting Semiconductor Device Via-Hole Acoustic Pressure Ac Voltage Design And Analysis Dissipation Method Dual Output Converter Etching Conditions Gan Diode Fabrication Tolerance Gallium Nitride (Gan) Gap Height Hard Switching High Speed Switching High Switching Speed Heat Transfer Gap Cavity Instrumentation Amplifier I-V Measurement Lateral Misalignment Voltage Characteristics Metal-Insulator-Semiconductor(MIS) Metal Layer Open Circuit Peak Electric Field Polymer Waveguide Schottky Barrier Height Platform Development Rf Power Sensor Material Semiconductor Package Secondary Ion Mass Spectrometry Storage Life Thermal Oxidation Thermal Treatments Current Status Embedded Cavity Cmp Process Al Doping Al Concentration As 2 Al Film Bulk Micromachining Bridge Structure Bonding Wires Device Performance Dynamic Ron Frequency Range Fluorine Ions Fabrication Method Gas Sensors Low-Power Operation Large-Scale Light Sources Multi-Layer Substrate Micromachining Process Non-Recessed Polymer-Based Read-Out Resistance Matching Stress-Free Single-Mode Fiber(SMF) Schottky Contacts Signal Line Si Mems Self-Heating Thermally Annealing Technology Cad Thermal Characteristics Current Density Control Circuit Capacitive Mems Avalanche Photo Diode(APD) Anode Structure Device Size Compound Semiconductor Drain Leakage Current Gas Concentration High-Efficiency Operation Impedance Converter Low Parasitic Inductance Load Impedance Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Matching Circuit Maximum Output Power Mesa Etching Measured Output Mems Devices P-Doping Poly-Silicon Process Technology Reverse Bias Reverse Voltage Reverse Recovery Time Silicon Substrate Solar Cells Small Form Factor Single-Input Si Surface Etching Voltage Shift Current Collapse Critical Inductance Clean Air Circular-Type Algan/Gan Heterostructure Buck Converter Electronic Nose System Frequency Response(FreRes) Efficiency Improvement High Switching Frequency Inverter Topology Low Onset Voltage Input Voltage Low Voltage Zero-Voltage Switching Mems Microphone Novel Device Optical Fiber Piezoelectric Power Generator Stabilization Time Recess Depth Si-Based Sic Power Devices Switching Power Saturated Output Power Storage Temperature Soft Switching Short Distance Theoretical Analysis Topology Design Treatment Effects Capacitive-Type Back Grinding Deep Reactive Ion Etching Doping Profile Doping Method Drain Voltage Front-Side High Power Density Low-Temperature Annealing Lift-Off Process Low Switching 3 V 48 V 16 Nm Cmos Process Minimum Noise Figure Memristor Device Neuromorphic Hardware Output Voltage Package Substrate Ring Structure Source Region Reliability Testing Standard Cmos System Architecture Si Substrate Switching Conditions Thick Photoresist Thin Structure Technology Foresight