ETRI-Knowledge Sharing Plaform

Schottky Barrier Diode(SBD) Breakdown Voltage(BDV) Normally-Off Algan/Gan-On-Si High Electron Mobility Transistor(HEMT) Sacrificial Layer Noise Level Reverse Leakage Current Forward Current Field-Effect Transistors(FETs) Acoustic Sensor Dry Etching Bottom Electrode Power Semiconductor Acoustic Device High Thermal Conductivity Channel Width Electrical Characteristics Field Plate Micro-Electro-Mechanical System(MEMS) Low Stress Low Turn-On Voltage Temperature Test Silicon Nitride Membrane Zero-Bias Gaas Substrates Maximum Deflection Depletion Mode 4h-Sic High Performance Plasma Treatment Power Conversion System Silicon Carbide(3C-SiC) Trade-Off Printed Circuit Board(PCB) Piezoelectric Thin Film Etching Process Low Temperature Cofired Ceramic(LTCC) Chemical Mechanical Polishing(CMP) Communication Technologies Reverse Recovery Charge Forward And Reverse Ltcc Substrate Si Wafer Sound Pressure Level Switching Loss Dc-Dc Converters Zinc Oxide(ZnO) Pfc Converter Gate Bias Low Noise Amplifier(LNA) Surface Passivation Algan/Gan Hfet Boost Converter High Power Conversion Efficiency Laser Doppler Vibrometer Integrated Process Power Electronics 2 Mm Gate Recess Structural Changes Surface Micromachining Conversion Systems Piezoelectric Membrane Enhancement-Mode Components Technology Design Evaluation Design Rule Device Structure Thermal Conduction Third-Order Intercept Point Heat Sink High-Efficiency Converter Heat Control Heat Dissipation Rate High-Speed Switching High Voltage High Gain Ict Convergence N-Type Optical Axis Off-State Stress Platform-Based Electroplated Cu Energy Loss Gate Electrode Ground-Signal-Ground Resistance Ratio Load Conditions Low Leakage Current Multi-Frequency Mechanical Vibration MOS-HEMT Major Switching Metal Oxide Semiconductor Membrane Diameter Temperature Humidity Bias(THB) Drop-Coating Working Temperature Ultra-Thin Vacuum Pump Water Pressure Sub-Ppm Mass Spectrometry Analysis Gap Structures Metal Plate Dopant Activation Air-Gap Activation Ratio Au Nanoparticles(Au-NPs) Bias Circuit Built-In Voltage Battery Voltage Bipolar Junction Transistor Chip Package Treatment Process 700 V Initialization Vector(IV) In-Situ Oxide Etch On-Resistance Need For Polymer Composites Passive Alignment Recessed Gate Field Metal Full-Load Gan Hfets Gate Fabrication Gate Leakage Gan On Sic Low-Rate Algan/Gan Mis-Hemt Sic Surface Vibration Environment Vibration Exciter Sandwich Structure Cost-Effective Drain Current Axis Alignment Built-In Potential Cascode Structure Continuous Wave(CW) Cascode Gan Fet Carbon Black Threshold Voltage(Vth) Semiconductor Device Through Silicon Vias(TSV) Thermal Stress 900 V Heat Flux High Temperature Storage National Defense Operating Temperature Planar Lightwave Circuit(PLC) Promotion Strategy Electric Bike Electrical Signal Forward Voltage First Stage Reverse Current 5 Nm Led Lighting Metal Ring Multilayer Circuit Thermal Vias Sintered Wick Silicon Membrane Sensing Electrodes Smd Package Substrate Surface Synchronous Buck Support Project Smart Lighting Design And Analysis Dual Output Converter Dissipation Method Acoustic Pressure Ac Voltage Thermal Treatments Hard Switching Heat Transfer High Switching Speed Instrumentation Amplifier I-V Measurement Open Circuit Peak Electric Field Polymer Waveguide Platform Development Rf Power Etching Conditions Fabrication Tolerance Gap Cavity Gan Diode Gap Height Gallium Nitride (Gan) Lateral Misalignment Metal Layer Metal-Insulator-Semiconductor(MIS) Thermal Oxidation Secondary Ion Mass Spectrometry Schottky Barrier Height Semiconductor Package Voltage Characteristics Via-Hole Storage Life Sensor Material Cmp Process Dynamic Ron Device Performance Al Doping Al Concentration As 2 Al Film Bulk Micromachining Bridge Structure Bonding Wires Current Status Thermally Annealing Technology Cad Non-Recessed Polymer-Based Embedded Cavity Fluorine Ions Fabrication Method Frequency Range Gas Sensors Read-Out Resistance Matching Large-Scale Low-Power Operation Light Sources Multi-Layer Substrate Micromachining Process Schottky Contacts Signal Line Single-Mode Fiber(SMF) Si Mems Self-Heating Stress-Free Capacitive Mems Compound Semiconductor Device Size Avalanche Photo Diode(APD) Anode Structure Current Density Control Circuit High-Efficiency Operation Impedance Converter P-Doping Process Technology Poly-Silicon Reverse Bias Gas Concentration Reverse Voltage Reverse Recovery Time Low Parasitic Inductance Load Impedance Maximum Output Power Mesa Etching Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Matching Circuit Measured Output Mems Devices Drain Leakage Current Silicon Substrate Solar Cells Small Form Factor Single-Input Si Surface Etching Clean Air Circular-Type Algan/Gan Heterostructure Buck Converter Critical Inductance Current Collapse Theoretical Analysis Short Distance Treatment Effects Thermal Characteristic Zero-Voltage Switching High Switching Frequency Inverter Topology Input Voltage Novel Device Optical Fiber Piezoelectric Power Generator Electronic Nose System Recess Depth Efficiency Improvement Frequency Response(FreRes) Low Voltage Low Onset Voltage Mems Microphone Topology Design Switching Power Si-Based Sic Power Devices Saturated Output Power Voltage Shift Soft Switching Stabilization Time Storage Temperature Capacitive-Type Deep Reactive Ion Etching Doping Profile Doping Method Drain Voltage Back Grinding Cmos Process Thick Photoresist 3 V 48 V Heat Pipes High Power Density Neuromorphic Hardware Output Voltage Package Substrate Ring Structure Reliability Testing Lift-Off Process Low Switching Low-Temperature Annealing Minimum Noise Figure Memristor Device Source Region System Architecture Standard Cmos Si Substrate Switching Conditions Thin Structure Technology Foresight 16 Nm Front-Side