ETRI-Knowledge Sharing Plaform

Schottky Barrier Diode(SBD) Breakdown Voltage(BDV) Normally-Off Algan/Gan-On-Si High Electron Mobility Transistor(HEMT) Sacrificial Layer Forward Current Noise Level Reverse Leakage Current Field-Effect Transistors(FETs) Acoustic Sensor Dry Etching Bottom Electrode Power Semiconductor Acoustic Device High Thermal Conductivity Channel Width Electrical Characteristics Field Plate Micro-Electro-Mechanical System(MEMS) Low Turn-On Voltage Low Stress Piezoelectric Membrane Silicon Nitride Membrane Zero-Bias Gaas Substrates Maximum Deflection Depletion Mode 4h-Sic High Performance Plasma Treatment Power Conversion System Silicon Carbide(3C-SiC) Trade-Off Piezoelectric Thin Film Etching Process Low Temperature Cofired Ceramic(LTCC) Printed Circuit Board(PCB) Chemical Mechanical Polishing(CMP) Communication Technologies Forward And Reverse Ltcc Substrate Reverse Recovery Charge Si Wafer Switching Loss Sound Pressure Level Dc-Dc Converters Zinc Oxide(ZnO) Gate Bias Low Noise Amplifier(LNA) Pfc Converter Surface Passivation Algan/Gan Hfet Boost Converter High Power Conversion Efficiency Laser Doppler Vibrometer Surface Micromachining Gate Recess Integrated Process 2 Mm Power Electronics Structural Changes Conversion Systems Temperature Test Enhancement-Mode Thermal Conduction Components Technology Device Structure Design Rule Design Evaluation Drop-Coating Temperature Humidity Bias(THB) Third-Order Intercept Point Ultra-Thin Vacuum Pump MOS-HEMT Working Temperature Water Pressure Heat Control Energy Loss Electroplated Cu Gate Electrode Ground-Signal-Ground Gap Structures High Gain Heat Sink High-Efficiency Converter High Voltage Heat Dissipation Rate Low Leakage Current Ict Convergence Load Conditions Major Switching Multi-Frequency Mechanical Vibration Metal Plate Mass Spectrometry Analysis Metal Oxide Semiconductor Membrane Diameter N-Type Off-State Stress Optical Axis Platform-Based Resistance Ratio Sub-Ppm Treatment Process Algan/Gan Mis-Hemt Activation Ratio Au Nanoparticles(Au-NPs) Air-Gap Chip Package Dopant Activation Bias Circuit Built-In Voltage Battery Voltage Bipolar Junction Transistor 700 V Vibration Environment Vibration Exciter Field Metal Full-Load Gan Hfets Gate Fabrication Gate Leakage Gan On Sic Initialization Vector(IV) In-Situ Low-Rate Light Source Need For Oxide Etch On-Resistance Polymer Composites Passive Alignment Recessed Gate Sic Surface Sandwich Structure Threshold Voltage(Vth) Through Silicon Vias(TSV) Thermal Stress Axis Alignment Cascode Structure Continuous Wave(CW) Carbon Black Cascode Gan Fet Cost-Effective Drain Current Built-In Potential Thermal Vias 900 V Electric Bike Electrical Signal Forward Voltage First Stage Heat Flux High Temperature Storage Led Lighting Metal Ring Multilayer Circuit Operating Temperature National Defense Planar Lightwave Circuit(PLC) Promotion Strategy Reverse Current 5 Nm Sintered Wick Silicon Membrane Smd Package Sensing Electrodes Synchronous Buck Substrate Surface Semiconductor Device Support Project Smart Lighting Thermal Oxidation Thermal Treatments Ac Voltage Acoustic Pressure Dissipation Method Design And Analysis Dual Output Converter Voltage Characteristics Via-Hole Secondary Ion Mass Spectrometry Etching Conditions Fabrication Tolerance Gan Diode Gap Height Gallium Nitride (Gan) Gap Cavity Hard Switching Heat Transfer High Speed Switching High Switching Speed I-V Measurement Instrumentation Amplifier Lateral Misalignment Metal-Insulator-Semiconductor(MIS) Metal Layer Open Circuit Peak Electric Field Polymer Waveguide Rf Power Platform Development Sensor Material Schottky Barrier Height Semiconductor Package Storage Life Thermal Characteristics As 2 Al Film Al Doping Al Concentration Current Status Cmp Process Dynamic Ron Device Performance Bulk Micromachining Bridge Structure Bonding Wires Thermally Annealing Technology Cad Embedded Cavity Fluorine Ions Gas Sensors Fabrication Method Frequency Range Low-Power Operation Large-Scale Multi-Layer Substrate Micromachining Process Non-Recessed Polymer-Based Read-Out Resistance Matching Stress-Free Single-Mode Fiber(SMF) Schottky Contacts Signal Line Si Mems Self-Heating Anode Structure Avalanche Photo Diode(APD) Current Density Control Circuit Capacitive Mems Compound Semiconductor Drain Leakage Current Device Size Single-Input Gas Concentration High-Efficiency Operation Impedance Converter Low Parasitic Inductance Load Impedance Mems Devices Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Matching Circuit Maximum Output Power Mesa Etching Measured Output P-Doping Process Technology Poly-Silicon Reverse Bias Reverse Voltage Reverse Recovery Time Solar Cells Silicon Substrate Small Form Factor Si Surface Etching Treatment Effects Algan/Gan Heterostructure Current Collapse Critical Inductance Clean Air Buck Converter Topology Design Theoretical Analysis Voltage Shift Stabilization Time Optical Fiber Zero-Voltage Switching Electronic Nose System Efficiency Improvement Frequency Response(FreRes) High Switching Frequency Inverter Topology Input Voltage Low Onset Voltage Low Voltage Circular-Type Mems Microphone Novel Device Piezoelectric Power Generator Recess Depth Saturated Output Power Si-Based Switching Power Sic Power Devices Storage Temperature Soft Switching Short Distance Thick Photoresist 3 V Cmos Process Capacitive-Type Deep Reactive Ion Etching Doping Profile Doping Method Back Grinding Drain Voltage 48 V Technology Foresight Thin Structure 16 Nm High Power Density Front-Side Heat Pipes Low-Temperature Annealing Lift-Off Process Low Switching Minimum Noise Figure Memristor Device Neuromorphic Hardware Output Voltage Package Substrate Ring Structure Reliability Testing Source Region Standard Cmos System Architecture Si Substrate Switching Conditions