ETRI-Knowledge Sharing Plaform

Oxide Thin-Film Transistors Transparent Thin Film Transistor(TTFT) Gate Insulator Top-Gate Active Layer Oxide Tfts Field-Effect Mobility Room-Temperature Transparent Electrode Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Touch Screen Panel(TSP) Ito Film Ionized Physical Vapor Deposition(IPVD) Drain Current Subthreshold Swing(SS) Zinc Tin Oxide Applied Physics Igzo Thin Film Zn-Sn-O(ZTO) Post-Annealing Transparent Heaters Tail States Current On-Off Ratio Vapor Deposition Method Mobility Fluctuation Ti-Doped Ito Electrical Performance Double Layered Al-Zn Double-Channel High Performance Zno Thin Films Electrical Stability Turn-On Voltage Oxide Thin Films Silicon Quantum Dots Atomic Ratio Glass Substrate Voltage-Dependent Optical Transmittance Capacitive Touch Screen Rf Magnetron Sputtering Dc Magnetron Sputtering Er Doping Bias Stability Cu-Doped Zno Structural And Optical Properties Reactive Sputtering Multilayer Electrode Active Matrix Hybrid Electrode Electrical Characteristics Mo-Doped Zno(ZnO:Mo) Low Frequency Noise Stress Test Positive Bias Wide Range 1 H Transparent Display Gas Mixture Dielectric Layer Channel Length Aperture Ratio Highly Transparent Indium Tin Oxide Electrodes Combinatorial Method Active Channel Touch Sensor Sputtering Process Large Size Channel Structure Dry Etching AM-OLED Cell Patterns Next-Generation Source And Drain Silver Nanowires(AgNWs) Ag Nanowires Noise Power High Sensitivity Amorphous Igzo Nonvolatile Memory Devices Analytical Modeling Wet Etching Process Gate Dielectric Constant Current Stress Oxidizing Atmosphere Ito Thin Film Zno Electrode Optical And Electrical Properties Rf Power Single-Layer Model-Based A-Igzo Tfts Communication Technologies Doped Zno Films Icp Power Gate Voltage Process Development Normalized Noise Channel Layer Seed Layer 20 Nm Physical Model Comparative Study Small Form Factor Charge Trapping Touch Sensitivity Ict Convergence Run-Out High Deposition Rate Ultra-Thin Sputtering Pressure Ag Thin Film Electron Beam Irradiation Interfacial Trap Gate Electrode Formation Process Process Temperature Low Drain Voltage Low Pressure Chemical Vapor Deposition Optical Recording System Doped Oxide Protection Layer Low Temperature Fabrication Device Degradation Hybrid-Type Doping Effects Mobile Charges Radio Frequency(RF) Cell Structure Square Pattern Amorphous-Like Selective Epitaxial Growth(SEG) P-N Junction P-Type Conductivity Flexible Device Technical Barrier Power Spectral Density(PSD) Petri Net(PN) Transparent Oxide Semiconductor Effect Of Oxygen Device Stability Current Noise Electric Car 1/F Noise Out-Diffusion Improved Crystallinity Series-Connected Zn Oxide Contact Electrodes Rectifying Characteristics Xrd Measurements Low Temperature Processing Battery Voltage Ag Deposition Gate Bias Stress Zinc-Doped Highly Conductive Small Area New Type Silicon Nitride Film Plasma-Enhanced Chemical Vapor Deposition(PECVD) Interface Formation Threshold Voltage Shift Improved Stability Red Emitting Gan Led Atomic Layer Deposition Thermal Process Zno Target Density Of Trap States X-Ray Photoelectron Spectroscopy (Xps) Azo Thin Films Plasma Power In-Situ Crystallization High Mobility Transistor Inductively Coupled Plasma Reactor Ga Content Thermal Sensors Blu-Ray Dc Power Supply Etching Selectivity Nano-Crystalline Plasma Density Large-Area Electronics Electronic Materials Ag Layer Stability And Performance Gate Leakage Current Conductive Oxide Remote Phonon Scattering Ti Thin Film Efficiency Droop Surface Uniformity Compositional Ratios Drain Electrode Oled Display E-Beam Trade-Off Copper Material 5 Nm Channel Material Led Applications Long-Distance Optimum Condition Negative Shift Thermal Stability(TGA) Current-Voltage (I-V) Characteristics Layer Composition Photo Resist Orders Of Magnitude Mobile Device Application Spectroscopy Analysis Magnetron Co-Sputtering System Planar Structure Matching Layer Organic Light-Emitting Device(OLED) Oxide Gate Oxide Material Supersaturation Ratio Oxide Channel Ito Electrode Carbon Nano-Tube(CNT) Current Spreading Constant Dc Chemically Strengthened Glass Subthreshold Slope(SS) Technology Infrastructure Short-Range Ordering Integrated Circuit Re-Sputtering Layer Effect High-Density N-Type Doping Transparent Conductive Optoelectrical Properties Anneal Treatment Mobile Devices Rewritable Optical Disks O Atoms Multi-Touch Work Function Process Zone Large Area Devices Carrier Concentration Loading Effect Low Resistivity Current-Voltage Measurements P-Gan Sputter Deposition Metal Nanowires Co-Planar Hole Type Infrastructure Support Post-Heat Treatment Electrical And Mechanical Properties Zn Concentration Band-Gap Energy Oxygen Vacancies Bottom Gate Structure Low Light Cu Concentration Ferroelectric Polarization Cu-Contamination Carrier Density Buffer Layer Non-Uniformity Trap Sites Process Window Enhanced Mobility Plasma Process Amorphous Silicon I-V Measurement Surface Roughness Amorphous Ingazno Thin Film Tilt Margin Edge Shape Fabrication And Characterization Output Characteristics Stability Characteristics Metal-Doped Vdf-Trfe Pl Intensity Voltage Sweep Zno-Sno 2 Touch Performance Metal Grids Device Applications Electrical And Optical Properties Semiconductor Films Low Sheet Resistance Trapped Electron(TE) Electronic Properties Long-Run Interfacial Layer Blue Light-Emitting Diodes Bond Enthalpy Cooling Water Ag-Doped Positive And Negative Device Characteristics Azo Film Organic And Inorganic Materials Protective Layer Oxygen Binding Metallic Sb Polymer Materials Process Optimization Open Technology Exponential Distribution Power Law Low Transmittance Uv Lamp Output Current Transparent Contact Layer Frequency Range Scattering Parameters(S-parameters) Sn-Doped Zno Good Stability Reactive Rf Magnetron Sputter Device Performance Ingazno Tfts Quartz Tube Rf Sputtering Post-Deposition Treatment Contact Hole Smooth Surface 3.5 Mm Binding Energy Gate Oxide Quantum Dot Film Visible Light Illumination Spin-Coating Method High Yield Flat Panel Display(FPD) Potassium Ions Pressure Sensitive Silicon Oxide Gallium Nitride(GaN) High Linearity Hysteresis Curve First Stokes(S1) Light Output Power(Lop) Contact Noise Amorphous Oxide Semiconductor Single Channel Time Dependence Glass Surface Roll-To-Roll Potential Applications Direct Current(DC) Mechanical Durability Multilayer Films Layered Oxide Trapping Behavior Si-Based Processing Diagrams Igzo Target High Electron Mobility Transistor(HEMT) Structural And Electrical Properties High Transparency Tin Oxide Films In-Sn-Zn-O Gan-Based Leds Ion Beam Deposition Plasma Effects Power Spectra Density Charge Injection Co-Sputtering Method Channel Noise Metal Foil Ito Target Two-Step Annealing Sputtering Target Reduction Of Oxygen Off Current Transparent Memristor Negative Bias Artificial Skin Rf Magnetron Co-Sputtering Dependence Of Threshold Voltage Photo-Generated Holes Flexible Sensors Optoelectronic Devices Light Scattering Metal Electrode Transparent Electronics Heat-Treated Compensation Effect Oxygen Bonding Chemical Strengthening Flexible Substrate Overdrive Voltage Polyethylene Terephthalate (Pet) Substrates White Led Thermal Annealing Ti Film 5 Mol%(MgO) Ti Doping Wavelength Range Combinatorial Approach High Capacitance High Speed Flexible Pressure Sensor Organic-Inorganic Cover Layer Transparent Tft Doping Method Overall Performance Gas-Phase Reactions Reliable Transfer Relative Intensity New Device Capacitive-Type Enhancement-Mode Good Crystallinity Metallic Zinc Applied Voltage Optimization Methods Pulse Width Dielectric Materials Doped Sno 2