ETRI-Knowledge Sharing Plaform

Schottky Barrier Diode(SBD) Power Semiconductor Dc-Dc Converters Forward Current Multilayer Circuit Silicon Carbide(3C-SiC) Algan/Gan-On-Si Power Conversion System Power Inductor Reverse Recovery Charge Breakdown Voltage(BDV) Electrical Characteristics Input Voltage Power Losses Dry Etch Stray Inductance 700 V Sic Sbd Channel Width High Electron Mobility Transistor(HEMT) Normally-Off Low Switching Low Turn-On Voltage Supply Voltage Dynamic Characteristics Temperature Humidity Bias(THB) Power Factor Correction (Pfc) Converter Load Conditions Load Regulation Load Change Wheel Motor Commercial Products Full-Load Reverse Leakage Current Dynamic Load Electric Bike High Temperature Storage High Current Trade-Off Output Power Switching Characteristics Dbc Substrate Electromagnetic Interference Forward And Reverse Switching Loss Storage Life Semiconductor Package Electrical Resistance Gate Bias High Thermal Conductivity Theoretical And Experimental Analysis Line Regulation Multi-Layer Substrate Low Current Performance Analysis Algan/Gan Hfet Boost Converter Control Scheme High Power Conversion Efficiency Low Parasitic Inductance Reverse Voltage Class B Efficiency Improvement Turn-Off Low Voltage Power Electronics Permanent-Magnet(PM) Parasitic Effects Structural Changes Conversion Systems Temperature Test Design Evaluation Electrical Properties(I-V curve) Gan Mis-Hemt Input Power High Voltage High-Efficiency Converter Heat Dissipation Rate Transmission Line True-Time Delay Low Leakage Current MOS-HEMT Low Temperature Co-Fired Ceramic (Ltcc) Substrate Level Shifter Off-State Stress On-State Characteristics Radio Frequency(RF) Rated Power Resistive Component Surface Acting Working Temperature Battery Voltage Ceramic Substrate Depletion Mode Degradation Rate Design And Control Explicit Methods Gan Hfets Gate Fabrication Gate Leakage Gan On Sic High Performance Human Body Model(HBM) In-Situ Plasma Treatment Lead Free Solder Alloy Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) Low Threshold Voltage On-Resistance New Type Pin Diode Recessed Gate Quality-Factor(Q-factor) S-Band Saturation Current Voltage Performance Wire Bonding Anode And Cathode Brushless Dc (Bldc) Motor Cascode Gan Fet Cross Regulation Cost-Effective Ceramic Layers Circumferential Air Drain Current Direct Bonded Copper(DBC) Etching Process Extraction Method Electrical Energy Forward Voltage Insertion Loss High-Power Applications 1200 V Thermal Vias Numerical Simulations Output Stability Printed Circuit Board(PCB) Rotational Symmetry Reverse Current Sic Mosfet Smd Package Synchronous Buck Average Efficiency Design And Analysis Driving Capability Dual Output Converter Input And Output High-Density Hard Switching Thermal Cycling Thermal Oxidation Torque Analysis Loss Characteristics Metal-Insulator-Semiconductor(MIS) Metal Layer Magnetic Dipole Surface Mount Device Static And Dynamic Performances Self-Aligned Heat Transfer Attitude Error Aluminum Wires Bonding Structure Dynamic Ron Embedded Cavity Fluorine Ions Half-Bridge Power Module Hemispherical Shell Thick Copper Large-Scale Mechanical Operation Mobile Application(APP) Oxide-Semiconductor Field-Effect Transistors Power Limiter Output Ripple Reflection Loss Power Device Power Factor Correction Converter Surface Passivation Signal Line Self-Heating Simulation And Experiment As 2 Al Film Anode Structure Conduction Loss Drain Leakage Current Device Size Direct Current Resistance(DCR) Mesa Etching Non-Doped Power Signal Physical Model Process Technology Reverse Bias Peak Current Radiated Emission Reverse Recovery Time Silicon Substrate Small Form Factor Single-Input Snap-Back Virtual Shaft 2 Mm Air-Core Buck Converter Current Collapse Control Lines Double-Pulse Dynamic Test Electro-Static Discharge(ESD) Gate Recess High Reliability High Switching Frequency Inverter Topology Theoretical Analysis Topology Design Si-Based Lateral Dimensions Noise Mitigation Pulse Power Zero-Voltage Switching Rf Receiver Power Converter Switching Power Switching Device Storage Temperature Small Size Soft Switching Stabilization Time Semiconductor Packaging 16 Nm 3.5 Ghz 3 V Back Electromotive Force Blocking Voltage Channel Length Drain Voltage Dual Stack Device Packaging Electrical Engineers Enhancement-Mode Electric Vehicle(EV) High Power Density Interference Test Inductance Extraction 48 V Lift-Off Process Low Loss Motor System Motor Dynamics Output Voltage Pulse Generator Reliability Testing Switching Noise System Architecture Switching Conditions