ETRI-Knowledge Sharing Plaform

Schottky Barrier Diode(SBD) Power Semiconductor Dc-Dc Converters Silicon Carbide(3C-SiC) Multilayer Circuit Forward Current Algan/Gan-On-Si Reverse Recovery Charge Power Inductor Power Conversion System Power Losses Input Voltage Electrical Characteristics Breakdown Voltage(BDV) Dry Etch High Electron Mobility Transistor(HEMT) 700 V Sic Sbd Normally-Off Stray Inductance Channel Width Dynamic Characteristics Temperature Humidity Bias(THB) Wheel Motor Load Conditions Load Regulation Load Change Power Factor Correction (Pfc) Converter Commercial Products Full-Load Reverse Leakage Current Trade-Off Dynamic Load Electric Bike High Temperature Storage High Current Output Power Switching Characteristics Dbc Substrate Electromagnetic Interference Forward And Reverse Semiconductor Package Switching Loss Storage Life Theoretical And Experimental Analysis Electrical Resistance Gate Bias High Thermal Conductivity Line Regulation Low Current Multi-Layer Substrate Performance Analysis Algan/Gan Hfet Control Scheme Boost Converter High Power Conversion Efficiency Low Parasitic Inductance Reverse Voltage Class B Turn-Off Efficiency Improvement Low Voltage Power Electronics Permanent-Magnet(PM) Parasitic Effects Structural Changes Conversion Systems Temperature Test Low Turn-On Voltage Low Switching Supply Voltage Blocking Voltage Drain Voltage 48 V Pulse Generator 16 Nm High Power Density Enhancement-Mode Electrical Engineers Electric Vehicle(EV) Interference Test Inductance Extraction Lift-Off Process Low Loss Motor System Motor Dynamics Output Voltage Reliability Testing System Architecture Switching Conditions Switching Noise Simulation And Experiment Anode Structure Drain Leakage Current Device Size Direct Current Resistance(DCR) Virtual Shaft Single-Input Radiated Emission Mesa Etching Non-Doped Conduction Loss Power Handling Capability Power Signal Physical Model Process Technology Peak Current Reverse Bias Reverse Recovery Time Silicon Substrate Small Form Factor Snap-Back Air-Core Current Collapse Control Lines Buck Converter Double-Pulse Dynamic Test Topology Design Theoretical Analysis Stabilization Time Zero-Voltage Switching Gate Recess High Reliability High Switching Frequency High Power Applications Inverter Topology Lateral Dimensions Noise Mitigation 2 Mm Pulse Power Power Converter Rf Receiver Si-Based Switching Power Storage Temperature Soft Switching Switching Device Semiconductor Packaging Small Size 3 V 3.5 Ghz Channel Length Dual Stack Device Packaging Back Electromotive Force 1200 V Etching Process Extraction Method Electrical Energy Forward Voltage Insertion Loss Numerical Simulations Output Stability Printed Circuit Board(PCB) Reverse Current Rotational Symmetry Smd Package Synchronous Buck Sic Mosfet Thermal Oxidation Average Efficiency Design And Analysis Dual Output Converter Driving Capability Torque Analysis Thermal Cycling High-Density Hard Switching Heat Transfer Input And Output Loss Characteristics Metal-Insulator-Semiconductor(MIS) Metal Layer Magnetic Dipole Surface Mount Device Static And Dynamic Performances Self-Aligned As 2 Al Film Attitude Error Aluminum Wires Dynamic Ron Bonding Structure Thick Copper Embedded Cavity Fluorine Ions Hemispherical Shell Half-Bridge Power Module Large-Scale Mechanical Operation Mobile Application(APP) Oxide-Semiconductor Field-Effect Transistors Output Ripple Power Limiter Power Factor Correction Converter Power Device Reflection Loss Surface Passivation Signal Line Self-Heating Design Evaluation Transmission Line True-Time Delay MOS-HEMT Working Temperature Electro Static Discharge(ESD) Electrical Properties(I-V curve) Gan Mis-Hemt High Voltage High-Efficiency Converter Heat Dissipation Rate Low Leakage Current Input Power Low Temperature Co-Fired Ceramic (Ltcc) Substrate Level Shifter Off-State Stress On-State Characteristics Radio Frequency(RF) Rated Power Resistive Component Surface Acting Ceramic Substrate Depletion Mode Design And Control Battery Voltage Degradation Rate Voltage Performance Wire Bonding Explicit Methods Gan Hfets Gate Fabrication Gate Leakage Gan On Sic High Performance Human Body Model(HBM) In-Situ Lead Free Solder Alloy Low Threshold Voltage Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) New Type On-Resistance Plasma Treatment Pin Diode Recessed Gate Quality-Factor(Q-factor) Saturation Current S-Band Anode And Cathode Ceramic Layers Cascode Gan Fet Circumferential Air Cost-Effective Cross Regulation Drain Current Direct Bonded Copper(DBC) Brushless Dc (Bldc) Motor Thermal Vias