ETRI-Knowledge Sharing Plaform

Spatial Light Modulator(SLM) Oxide Tfts High Performance Digital Holography Channel Length Phase Change Material(PCM) Subthreshold Slope(SS) Next-Generation Large Area Holographic Display Data Line Gate Dielectric Spatial Light Modulation Glass Substrate Display Panel High Field-Effect Mobility Short Channel Gate Insulator Highly Stable Digital Hologram Electrical Characteristics Solution-Processed Indium-Free Low Temperature(LT) Ultra-High Resolution Turn-On Voltage On/Off Ratio Pixel Structure Ultrathin Layer Vertical Channel Metal Oxide Thin-Film Transistors Gate Line 3d Image Sub-Micron Optical Components Plasmonic Structures Visible Range Active Layer Display Applications Double Layer High Mobility Channel Width Liquid Crystal High-Resolution Displays Resonant Cavity Neuromorphic Hardware Memristor Device Thin Structure Dry Etching Annealing Conditions Back-Channel Etch Cathode Ray Tube Lossy Dielectric Layer Large Size Modulation Characteristic Naked Eye Ohmic Contact Resistance Phase-Only Electrically Controlled Birefringence Focused Analysis Holography System High-Speed Interface Steep Slope Sn-Rich Atomic Layer Deposition Absorption Features Absorption Profile Light Waves Treatment Process Ring Oscillator Metal Source/Drain(S/D) Narrow Channel Need For Oscillating Frequency Transistor Characteristics Double-Channel Electronic Holography Earth-Abundant Materials Full-Color High-Speed Operation High Definition High-Quality Highly Conductive Inverted Staggered In-Zn-O Reflection-Type STRETCHABLE ELECTRONICS Active Matrix Display Active Area Charging And Discharging Critical Coupling Low Mobility Threshold Voltage(Vth) Three Dimensional(3D) Numerical Simulations Oxide Material Pixel Integration Perfect Absorption Erasing And Rewriting Etch Damage Etching Process Electronic Devices Facile Route Flexible Display Fabrication Process Highly Efficient 3d Object Surface Plasmon(SP) Subthreshold Swing(SS) Stretchable Electrode Active Structure A-Igzo Tfts Broadband Applications Carrier Concentration Cross Talk Key Components Defect Sites Rapid Development Stable Output Wet Treatment Wearable Electronics Image Data Amplitude-Only Color-Selective Chemical Bonding State Thin Film Thermoelectric Treatment Method Multi-Band Interface Trap Igzo Semiconductor Oxide Semiconductor Off-State Current Short-Pulsed Device Performance Device Characteristics Defect Passivation Diagonal Length Frequency Range High Temperature In-Zn-Sn-O Shift Register Display System Very High Resolution Aluminum Oxide A-Ingazno Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Absorption Properties Binary Pattern Computer Generated Holograms(CGH) Laser Writing Numerical Study Photo-Stability Pulsed Current Etching Damage External Bias Comparative Study Solution-Processable First Stokes(S1) Subwavelength Metallic Gratings Spectral Absorption Technical Issues Image Hologram Coupling Conditions Low Annealing Temperature Lcd Panel Thermoelectric Materials Transparent Electronics Two-Dimensional Image Off Current Phase Modulation Positive Bias Electric Power Generation Hydrogen Atoms High Refractive Index Visible Region Small Size Structural Parameters Switching Device Wide Viewing Angle Absorption Characteristic Bias Stability Thermal Annealing Optical Modulation Proof-Of-Concept Fine Pitch High Concentration High-Capacity High Uniformity 20th Century 3 V Ultraviolet Laser Still Image Subwavelength Resolution Simulation Results