ETRI-Knowledge Sharing Plaform

Spatial Light Modulator(SLM) Oxide Tfts High Performance Digital Holography Channel Length Phase Change Material(PCM) Subthreshold Slope(SS) Next-Generation Large Area Holographic Display Data Line Spatial Light Modulation Gate Dielectric Glass Substrate Display Panel High Field-Effect Mobility Short Channel Digital Hologram Electrical Characteristics Gate Insulator Highly Stable Dry Etching Solution-Processed Indium-Free Ultra-High Resolution Low Temperature(LT) Turn-On Voltage Vertical Channel Ultrathin Layer On/Off Ratio Pixel Structure 3d Image Metal Oxide Thin-Film Transistors Gate Line Sub-Micron Visible Range Optical Components Plasmonic Structures Active Layer Display Applications Double Layer High Mobility Channel Width High-Resolution Displays Liquid Crystal Thin Structure Memristor Device Neuromorphic Hardware Resonant Cavity Annealing Conditions Cathode Ray Tube Back-Channel Etch Electrically Controlled Birefringence Focused Analysis Holography System High-Speed Interface Large Size Lossy Dielectric Layer Modulation Characteristic Naked Eye Ohmic Contact Resistance Phase-Only Sn-Rich Steep Slope Atomic Layer Deposition Absorption Features Absorption Profile Double-Channel Transistor Characteristics Treatment Process Electronic Holography Earth-Abundant Materials Full-Color Highly Conductive High-Speed Operation High Definition High-Quality In-Zn-O Inverted Staggered Light Waves Metal Source/Drain(S/D) Need For Narrow Channel Oscillating Frequency Ring Oscillator Reflection-Type STRETCHABLE ELECTRONICS 3d Object Active Matrix Display Active Area Charging And Discharging Critical Coupling Threshold Voltage(Vth) Three Dimensional(3D) Low Mobility Erasing And Rewriting Etch Damage Etching Process Electronic Devices Fabrication Process Facile Route Flexible Display Highly Efficient Numerical Simulations Oxide Material Perfect Absorption Pixel Integration Surface Plasmon(SP) Subthreshold Swing(SS) Stretchable Electrode Active Structure A-Igzo Tfts Carrier Concentration Cross Talk Defect Sites Broadband Applications Wet Treatment Wearable Electronics Key Components Rapid Development Stable Output Amplitude-Only Color-Selective Chemical Bonding State Defect Passivation Display System Diagonal Length Device Performance Device Characteristics Thin Film Thermoelectric Treatment Method Very High Resolution Interface Trap Igzo Semiconductor Frequency Range High Temperature In-Zn-Sn-O Image Data Multi-Band Oxide Semiconductor Off-State Current Shift Register Short-Pulsed Technical Issues A-Ingazno Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Absorption Properties Computer Generated Holograms(CGH) Comparative Study Binary Pattern Aluminum Oxide Etching Damage External Bias Laser Writing Numerical Study Photo-Stability Pulsed Current Solution-Processable First Stokes(S1) Subwavelength Metallic Gratings Spectral Absorption Transparent Electronics Coupling Conditions Thermoelectric Materials Two-Dimensional Image Visible Region Wide Viewing Angle High Refractive Index Electric Power Generation Hydrogen Atoms Image Hologram Low Annealing Temperature Lcd Panel Off Current Phase Modulation Proof Of Concept Positive Bias Small Size Structural Parameters Switching Device 3 V Thermal Annealing Absorption Characteristic Bias Stability Ultraviolet Laser Subwavelength Resolution High-Capacity Fine Pitch High Uniformity High Concentration Optical Modulation 20th Century Still Image Simulation Results