ETRI-Knowledge Sharing Plaform

High Performance Solution-Processed Field-Effect Transistors(FETs) Gate Dielectric Metal Oxide Thin-Film Transistors Active Layer Organic Field-Effect Dielectric Films First Stokes(S1) Low Voltage Low-Cost Oxide Tfts Annealing Conditions Water Vapor Transmission Rate Electrical Properties(I-V curve) Hybrid Materials Indium-Free Low-Power Cyclic Olefin Copolymer Transfer Characteristics Thin Film Encapsulation Facile Route Large-Area Electronics On/Off Ratio P-Type Characteristics Turn-On Voltage Deep Submicron On/Off Current Ratio Practical Application Plastic Substrate Uv Exposure High Mobility Hole Mobility Solution-Processable Flexible Electronics Active Devices Insulating Properties Dielectric Layer High Capacitance Inkjet Printing Manufacturing Processes Thermal Annealing Annealing Atmosphere Crack-Free Copolymer Layers Colloidal Stability Contact Configuration Charge Transfer Doped Polymer Excellent Flexibility Encapsulation Process Electrical Conductivity(EC) High Voltage Inorganic Thin Films Low Surface Roughness Low Temperature Fabrication Aligned Silver Nanowire Oxygen Gas Polymeric Substrates Polyethylene Naphthalate Propylene Carbonate Nano-Gap N-Type Repulsive Force Sn-Rich Tips-Pentacene Uv Light Uv Annealing Tio2 Nanoparticles Top-Emitting Organic Light-Emitting Device(TE-OLED) Visible Light Water Absorption Functional Materials Bottom Contact Channel Thickness Composite Electrode Crystalline Structure Double-Channel Earth-Abundant Materials Electrical Performance Highly Conductive Grazing Incidence X-Ray Diffraction Inverted Staggered Low Operating Voltage Need For 460 Nm Hysteresis-Free Optimum Thickness Precursor Solution P-Type Tin Oxide Next-Generation Printing Technique Resolution Limit Sol-Gel-Derived Zinc Tin Oxide Straight Line Severe Bending Silver Nanowires(AgNWs) Toxic Chemicals Three-Arm Tft Array Flexible Oleds Film Thickness Flexible Display Amphiphilic Polymer Annealing Process Cost-Effective Conductive Electrodes Crystalline Morphology High-K Zirconium Oxide Gate Leakage Current Highly Efficient High Responsivity In-Memory Lighting Applications Logic Devices Quantum-Dot Light-Emitting Diodes(QLEDs) Threshold Voltage(Vth) Subthreshold Swing(SS) Optimum Condition Organic-Inorganic Nanohybrid Oxide Thin Films Oxide Material Oxide Thickness Poly(Ethylene Oxide)(PEO) Room-Temperature Subthreshold Slope(SS) Surface Morphology Solvent-Assisted Stretchable Displays Semiconductor Device And Gate Al-Doped Carrier Concentration Composite Film Different Thicknesses Hexagonal Lattice Hall Mobility Mechanical Flexibility Memory Applications Carbon Atoms Tin(Ii) 2-Ethylhexanoate P-Channel P-Type Organic Semiconductor Novel Material Self-Aligned Trap Sites Titanium Oxide Thin-Film Phototransistors(TFPT) Thin Barrier Films Thermal Treatments Top Contact Voltage Transfer Well-Defined Fabrication And Characterization Fabrication Method Functional Group Free Volume Ambient Air Anneal Temperature Bottom Gate Channel Layer Complementary Metal-Oxide-Semiconductor(CMOS) Cone-Jet Mode Device Characteristics Dispersed Nanoparticles Device Performance Deep Uv Dielectric Strength Gate Bias High Temperature High Field-Effect Mobility Mechanical Properties(PMCs) Protective Layer Organic-Inorganic Hybrid Optical Properties Pen Substrates Post-Anneal Power Integrated Circuits Plasma-Enhanced Atomic Layer Deposition P-Type Oxide Semiconductor Printing Process Persistent Photoconductivity Surface Modification 2 H Thin Film Thermoelectric 2-Dichlorobenzene Zn-Sn-O(ZTO) Field Emission Scanning Electron Microscopy(FESEM) Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Double Layer Display Applications Environmental Stability External Bias Electronic Materials And Devices Gas Barrier Films Eco-Friendly High Dielectric Constant Hole Transport Layer Hybrid Thin Film Hydrophobic Polymer Image Sensor Low Leakage Current Density Light Emitting Devices Mass Production Oxide Semiconducting Materials Oxide Layer Oxide Electronics Organic Complementary Inverters Organic Electronic Optical Transmittance Polymer Substrate Potential Applications Photo-Stability Reduced Graphene Oxide(rGO) Smooth Surface Synthetic Strategy Two-Dimensional(2D) Tri-Layer Uv-Assisted Tin (Iv) Oxide Form Factor Flexible Electronic Devices Bending Cycles Back-Channel Etching Corrosion Tests Close-Packed Carrier Mobility Densely Packed Electrical Characteristics Graphene Films Electric Power Generation Go Sheets High Photoresponsivity Highly Stable Inorganic Material High Glass Transition Temperature Highly Crystalline Low Annealing Temperature Large-Area Graphene Mechanism Of Formation Photo-Generated Holes Optimized Condition Oxide Transistors Organic Thin-Film Transistors (Otfts) Optoelectronic Devices Power Electronics Power Electronic Devices Production Operations Patterning Process Reactive Gas Specific Detectivity Transparent Electronics Thermoelectric Materials Tin Oxide Films Film Formation Flexible Substrate Co-Solvent System Channel Length Crack Propagation Driving Characteristics Dielectric Materials Gas Molecules Electrohydrodynamic Jet Printing Gas Barrier Properties Homogeneous Solution K-Doped Industrial Technology Key Element Low Surface Energy Molecular Orientation Metal-Oxide-Metal Measuring Equipment Lift-Off Printing Method Plasma-Enhanced Chemical Vapor Deposition (Pecvd) Pulsed Laser Ablation(PLA) Polar Group Relative Humidity Stability And Durability Sol-Gel Reaction Semiconducting Layer Two-Step Heat Treatment Thermal Effects Various Substrates