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High Performance Spatial Light Modulator(SLM) Oxide Tfts Digital Holography Channel Length Organic Photodiode STRETCHABLE ELECTRONICS Digital Hologram High Field-Effect Mobility Data Line Indium Tin Oxide(ITO) Specific Detectivity Low Noise Photoactive Layer Holographic Display Gate Insulator Electrical Characteristics Indium Oxide Molybdenum Oxide Liquid Precursor Complementary Metal-Oxide-Semiconductor(CMOS) Optical Components Near-Infrared(NIR) Gate Line Oxygen Vacancies All-Oxide Oxide Thin Films Oxide Channel Three Dimensional(3D) Subthreshold Slope(SS) Pixel Structure Absorption Features Mixed Oxides Phase Change Material(PCM) Diethyl Zinc Conductive Paths Charge Transfer Dry Etching Excellent Performance Holography System High-Speed Interface High Density Integration Large Size Low-Power Light Intensity Lossy Dielectric Layer Naked Eye Quantum Dot(QD) Cathode Ray Tube Adhesion Properties Back-Channel Etch Electron States Sputtering Process Cycle Ratio Continuous Operation Absorption Profile Deformable Interconnects Device Architecture Full-Color High-Quality Low Temperature(LT) X-Ray Photoelectron Spectroscopy 460 Nm Next-Generation Non-Volatile Memory(NVM) Oxide Field Transfer Characteristics Transfer Process Tft Array Ultra-High Resolution Deposition Process Damp Heat Test Electrical Performance High Definition Light Waves Precursor Solution Reflection-Type Synergetic Contribution Voltage Drop Charge Storage Emotional Experience Electronic Product Electrical Contact Fabrication Process Film Thickness Field-Effect Transistors(FETs) High Responsivity 3d Object Weak Light Mixing Ratio Numerical Simulations Noise Equivalent Power Oxygen Plasma Pixel Integration P-Type Characteristics Perfect Absorption Oxygen-Deficient Subthreshold Swing(SS) Small Molecular Spectral Asymmetry Semiconductor Memory Temporal Response Trade-Off Ultrathin Layer Top Illumination Critical Coupling Double-Gate(DG) Erasing And Rewriting Large-Area Electronics Quantitative Description Single-Sided Connection System Cross Talk Ald Process Ald Method Broadband Applications Functional Additive Glass Substrate Hall Mobility Key Components 3d Image Metal Oxide Thin-Film Transistors Memory Structure Organic Transistor Pixel Array Rapid Development Stretchable Substrate Thin-Film Phototransistors(TFPT) Device Fabrication Integrated Electronics 10-Phenanthroline(BCP) Novel Material Self-Assembling Trapped Electron(TE) Visible Range Channel Layer Color-Selective Display Panel Device Performance Dual-Functional Energy-Efficient Frequency Range Gate Bias Integration Density Image Data Zinc Oxide(ZnO) 20 Nm Display System Metal Surface Multi-Band Plasma-Enhanced Atomic Layer Deposition Persistent Photoconductivity Plasma-Enhanced Ald Performance Degradation Real-World Superior Performance Top-Illuminated Bottom Gate Device Properties End Functionality Power Integrated Circuits Thin-Film Photodiode Charge Extraction Comparative Study Absorption Properties Amorphous Oxide Semiconductor Best Performance Etching Damage High Mobility Hole Mobility High External Quantum Efficiency Integrated System Laser Writing Wearable Device Image Sensor Optical Simulation Oxide Electronics Numerical Study Subwavelength Metallic Gratings Tin (Iv) Oxide Computer Generated Holograms(CGH) Binary Pattern Fingerprint Sensor Hyper-Realistic Spectral Absorption Tri-Layer Vacuum Deposition Channel Width Coupling Conditions Active Layer Thickness Dark Current High Refractive Index High-Resolution Displays Highly Stable Image Hologram Liquid Crystal Very Large Scale Integration(VLSI) Mechanical Strain Proof Of Concept Photo-Generated Holes Stable Performance Small Size Structural Parameters Soft Electronics Two-Dimensional Image Channel Potential Active Matrix High Photoresponsivity Inorganic Semiconductors Wide Viewing Angle 9-Dimethyl-4 Current Injection Bulk Heterojunction Film Formation High-Capacity Linear Dynamic Range Large Display Low-Cost 20th Century Detection Band Manufacturing Processes Memristor Device Neuromorphic Hardware Performance And Reliability Solution-Processed Simulation Results Thin Structure Ultraviolet Laser Absorption Characteristic K-Doped 7-Diphenyl-1 Operational Stability Resonant Cavity Still Image