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학술지 Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor
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저자
정순원, 나복순, 백강준, 김민석, 윤성민, 김주한, 김동유, 유인규
발행일
201308
출처
ETRI Journal, v.35 no.4, pp.734-737
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.13.0212.0280
협약과제
12VB1300, 에너지 절감을 위한 7인치기준 2W급 환경적응 디스플레이 신모드 핵심 원천 기술 개발, 추혜용
초록
Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 cm2/Vs, 105, and 10-10 A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics. © 2013 ETRI.
키워드
Ferroelectric, Inkjet-printing, Nonvolatile memory, P(VDF-TrFE)
KSP 제안 키워드
AND gate, Active Layer, Flexible electronics, Memory-based, Non-Volatile Memory(NVM), Organic semiconductor, Organic thin-film transistors, Thin-Film Transistor(TFT), VDF-TrFE, Voltage sweep, field-effect mobility