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학술지 Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors
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저자
신재헌, 이지수, 황치선, 박상희, 정우석, 유민기, 변춘원, 이정익, 추혜용
발행일
200902
출처
ETRI Journal, v.31 no.1, pp.62-64
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.09.0208.0266
협약과제
08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
초록
We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface. © 2009 ETRI.
키워드
Bias stability, Light effect, Thin film transistor (TFT), Transparent oxide semiconductor, ZnO
KSP 제안 키워드
Charge trapping, Gate bias stress, Gate insulator, Light effect, Photo-generated holes, Stability characteristics, Thin-Film Transistor(TFT), Visible light illumination, ZnO thin films, bias stability, thin film(TF)