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학술지 Novel Bumping and Underfill Technologies for 3D IC integration
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저자
성기준, 최광성, 배현철, 권용환, 엄용성
발행일
201210
출처
ETRI Journal, v.34 no.5, pp.706-712
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.12.0112.0104
협약과제
12MB1600, 웨이퍼레벨 3차원 IC 설계 및 집적기술, 최광성
초록
In previous work, novel maskless bumping and no-flow underfill technologies for three-dimensional (3D) integrated circuit (IC) integration were developed. The bumping material, solder bump maker (SBM) composed of resin and solder powder, is designed to form low-volume solder bumps on a through silicon via (TSV) chip for the 3D IC integration through the conventional reflow process. To obtain the optimized volume of solder bumps using the SBM, the effect of the volumetric mixing ratio of resin and solder powder is studied in this paper. A no-flow underfill material named "fluxing underfill" is proposed for a simplified stacking process for the 3D IC integration. It can remove the oxide layer on solder bumps like flux and play a role of an underfill after the stacking process. The bumping process and the stacking process using the SBM and the fluxing underfill, respectively, for the TSV chips are carefully designed so that two-tier stacked TSV chips are sucessfully stacked. © 2012 ETRI.
키워드
Fluxing underfill, Maskless bumping, Solder bump maker (SBM), Stacking process, Through silicon via (TSV)
KSP 제안 키워드
3D IC Integration, Integrated circuit, Mixing ratio, No-flow underfill, Oxide layer, Reflow process, Solder bump, Three dimensional(3D), Through silicon vias(TSV), low-volume, two-tier