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학술지 Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors
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저자
정우석, 박종혁, 신재헌
발행일
201212
출처
ETRI Journal, v.34 no.6, pp.966-969
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.12.0212.0232
협약과제
11VB2100, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
초록
From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc- oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis. © 2012 ETRI.
키워드
Electrical stability, IGZO, In-Ga-Zn oxide, Oxygen binding energy, Thin-film transistor, XPS
KSP 제안 키워드
Bias stress, Constant current(CC), Constant current stress, Effect of oxygen, Electrical stability, Ga-Zn, Indium gallium zinc oxide, O atoms, Positive bias, Spectroscopy analysis, Stress test