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학술지 380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure
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저자
배성범, 김성복, 김동철, 남은수, 임성묵, 손정환, Yi-Sang Jo
발행일
201308
출처
ETRI Journal, v.35 no.4, pp.566-570
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.13.1912.0029
협약과제
11MB6900, 의료 및 정밀 가공기기용 자외선(Deep UV) 반도체 레이저 개발, 남은수
초록
In this paper, we demonstrate the capabilities of 380-nm ultraviolet (UV) light-emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi-structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al-metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA. © 2013 ETRI.
키워드
GaN, LED, MOCVD, MQW, UV
KSP 제안 키워드
Light-emitting diodes (leds), MQW structure, Metalorganic chemical vapor deposition, Multiple-quantum-well(MQW), Patterned sapphire substrate, Quantum Well(QW), Surface mount device, UV-LED, Ultraviolet (UV) light-emitting diodes, Ultraviolet light(UV), Ultraviolet light-emitting diodes