상세정보
학술지
380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure
- 발행일
- 201308
- 출처
- ETRI Journal, v.35 no.4, pp.566-570
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 11MB6900, 의료 및 정밀 가공기기용 자외선(Deep UV) 반도체 레이저 개발, 남은수
- 초록
- In this paper, we demonstrate the capabilities of 380-nm ultraviolet (UV) light-emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi-structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al-metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA. © 2013 ETRI.
- KSP 제안 키워드
- Light-emitting diodes (leds), MQW structure, Metalorganic chemical vapor deposition, Multiple-quantum-well(MQW), Patterned sapphire substrate, Quantum Well(QW), Surface mount device, UV-LED, Ultraviolet (UV) light-emitting diodes, Ultraviolet light(UV), Ultraviolet light-emitting diodes