BROWSE
Detail
Journal Article
380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure
- Authors
- Sung-Bum Bae, Sung-Bok Kim, Dong-Churl Kim, Eun Soo Nam, Sung-Mook Lim, Jeong-Hwan Son, Yi-Sang Jo
- Issue Date
- 2013-08
- Citation
- ETRI Journal, v.35, no.4, pp.566-570
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, we demonstrate the capabilities of 380-nm ultraviolet (UV) light-emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi-structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al-metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA. © 2013 ETRI.
- KSP Keywords
- Light-emitting diodes (leds), MQW structure, Metalorganic chemical vapor deposition, Multiple-quantum-well(MQW), Patterned sapphire substrate, Quantum Well(QW), Surface mount device, UV-LED, Ultraviolet (UV) light-emitting diodes, Ultraviolet light(UV), Ultraviolet light-emitting diodes