상세정보
학술지
The Characteristics of a Hydrogenated Amorphous Silicon Semitransparent Solar Cell When Applying n/i Buffer Layers
- 발행일
- 201308
- 출처
- ETRI Journal, v.35 no.4, pp.730-733
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 11MB4100, 선택적 투과막 및 이종접합창을 이용한 투과성 a-SiGe 투명 태양전지 개발, 임정욱
- 초록
- In this work, buffer layers with various conditions are inserted at an n/i interface in hydrogenated amorphous silicon semitransparent solar cells. It is observed that the performance of a solar cell strongly depends on the arrangement and thickness of the buffer layer. When arranging buffer layers with various bandgaps in ascending order from the intrinsic layer to the n layer, a relatively high open circuit voltage and short circuit current are observed. In addition, the fill factors are improved, owing to an enhanced shunt resistance under every instance of the introduced n/i buffer layers. Among the various conditions during the arrangement of the buffer layers, a reverse V shape of the energy bandgap is found to be the most effective for high efficiency, which also exhibits intermediate transmittance among all samples. This is an inspiring result, enabling an independent control of the conversion efficiency and transmittance. © 2013 ETRI.
- KSP 제안 키워드
- Buffer layer, Conversion efficiency(C.E.), Energy band gap, Open circuit voltage(VOC), Short-Circuit Current, Shunt Resistance, V shape, Various conditions, fill factor, high efficiency, high open circuit voltage