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Journal Article The Characteristics of a Hydrogenated Amorphous Silicon Semitransparent Solar Cell When Applying n/i Buffer Layers
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Authors
Da Jung Lee, Sun Jin Yun, Seong Hyun Lee, Jung Wook Lim
Issue Date
2013-08
Citation
ETRI Journal, v.35, no.4, pp.730-733
ISSN
1225-6463
Publisher
한국전자통신연구원 (ETRI)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.4218/etrij.13.0212.0402
Project Code
11MB4100, Development of transmitting type a-SiGe transparent solar cell using selective transmitting layer and heterojunction window, Lim Jungwook
Abstract
In this work, buffer layers with various conditions are inserted at an n/i interface in hydrogenated amorphous silicon semitransparent solar cells. It is observed that the performance of a solar cell strongly depends on the arrangement and thickness of the buffer layer. When arranging buffer layers with various bandgaps in ascending order from the intrinsic layer to the n layer, a relatively high open circuit voltage and short circuit current are observed. In addition, the fill factors are improved, owing to an enhanced shunt resistance under every instance of the introduced n/i buffer layers. Among the various conditions during the arrangement of the buffer layers, a reverse V shape of the energy bandgap is found to be the most effective for high efficiency, which also exhibits intermediate transmittance among all samples. This is an inspiring result, enabling an independent control of the conversion efficiency and transmittance. © 2013 ETRI.
KSP Keywords
Buffer layer, Conversion efficiency(C.E.), Energy band gap, Open circuit voltage(VOC), Short-Circuit Current, Shunt Resistance, V shape, Various conditions, fill factor, high efficiency, high open circuit voltage