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Journal Article
Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor
- Authors
- Soon-Won Jung, Bock Soon Na, Kang-Jun Baeg, Minseok Kim, Sung-Min Yoon, Juhwan Kim, Dong-Yu Kim, In-Kyu You
- Issue Date
- 2013-08
- Citation
- ETRI Journal, v.35, no.4, pp.734-737
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 cm2/Vs, 105, and 10-10 A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics. © 2013 ETRI.
- KSP Keywords
- AND gate, Active Layer, Gate voltage, Memory-based, ON/OFF ratio, Organic Semiconductor Material(OSC), Thin-Film Transistor(TFT), VDF-TrFE(PZT/P), Vinylidene fluoride(VDF), Voltage sweep, field-effect mobility