상세정보
학술지
Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor
- 발행일
- 201308
- 출처
- ETRI Journal, v.35 no.4, pp.734-737
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 초록
- Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 cm2/Vs, 105, and 10-10 A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics. © 2013 ETRI.
- KSP 제안 키워드
- AND gate, Active Layer, Flexible electronics, Memory-based, Organic semiconductor, Organic thin-film transistors, Thin-Film Transistor(TFT), VDF-TrFE, Voltage sweep, field-effect mobility, gate leakage current