상세정보
학술지
Optimization of Selective Epitaxial Growth of Silicon in LPCVD
- 저자
- 정우석
- 발행일
- 200312
- 출처
- ETRI Journal, v.25 no.6, pp.503-509
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 02MB2200, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
- 초록
- Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high-density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas-phase reaction so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E-beam patterns, we evaluated and controlled selectivity loss and non-uniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.
- KSP 제안 키워드
- E-Beam, Gas-phase reactions, High-density, Loading effect, Low pressure chemical vapor deposition, Non-uniformity, Process Window, Processing diagrams, Selective epitaxial growth(SEG), Supersaturation ratio, electrical properties(I-V curve)