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Detail
Journal Article
Monolithic SiGe Up-/Down-Conversion Mixers with Active Baluns
- Authors
- Sang-Heung Lee, Seung-Yun Lee, Hyun-Chul Bae, Ja-Yol Lee, Sang-Hoon Kim, Bo Woo Kim, Jin-Yeong Kang
- Issue Date
- 2005-10
- Citation
- ETRI Journal, v.27, no.5, pp.569-578
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on-chip 1 to 6 GHz up-conversion and 1 to 8 GHz down-conversion mixers using a 0.8 μm SiGe hetero-junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up-conversion mixer was implemented on-chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit The measured results of the fabricated up-conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down-conversion mixer was implemented on-chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit The measured results of the fabricated down-conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.
- KSP Keywords
- 5 GHz, 6 GHz, Active baluns, Conversion gain, Down-conversion mixer, Epitaxial layer, Hetero-junction Bipolar Transistor(HBT), Interface circuit, Local oxidation, Oxidation of silicon, Power Conversion