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Journal Article
A Single Transistor-Level Direct-Conversion Mixer for Low-Voltage Low-Power Multi-band Radios
- Authors
- Byoung Gun Choi, Seok-Bong Hyun, Geum-Young Tak, Hee-Tae Lee, Seong-Su Park, Chul Soon Park
- Issue Date
- 2005-10
- Citation
- ETRI Journal, v.27, no.5, pp.579-584
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- A CMOS direct-conversion mixer with a single transistor-level topology is proposed in this paper. Since the single transistor-level topology needs smaller supply voltage than the conventional Gilbert-cell topology, the proposed mixer structure is suitable for a low power and highly integrated RF system-on-a-chip (SoC). The proposed direct-conversion mixer is designed for the multi-band ultra-wideband (UWB) system covering from 3 to 7 GHz. The conversion gain and input P1dB of the mixer are about 3 dB and -10 dBm, respectively, with multi-band RF signals. The mixer consumes 4.3 mA under a 1.8 V supply voltage.
- KSP Keywords
- Conversion gain, Direct Conversion, Gilbert-cell, RF signal, RF system, Supply voltage, System-on-a-Chip, Transistor-level, Ultra wide band(UWB), integrated RF, low-voltage low-power