상세정보
학술지
A Single Transistor-Level Direct-Conversion Mixer for Low-Voltage Low-Power Multi-band Radios
- 발행일
- 200510
- 출처
- ETRI Journal, v.27 no.5, pp.579-584
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 05MB2900, 초저전력 RF/HW/SW 통합 SoC, 박성수
- 초록
- A CMOS direct-conversion mixer with a single transistor-level topology is proposed in this paper. Since the single transistor-level topology needs smaller supply voltage than the conventional Gilbert-cell topology, the proposed mixer structure is suitable for a low power and highly integrated RF system-on-a-chip (SoC). The proposed direct-conversion mixer is designed for the multi-band ultra-wideband (UWB) system covering from 3 to 7 GHz. The conversion gain and input P1dB of the mixer are about 3 dB and -10 dBm, respectively, with multi-band RF signals. The mixer consumes 4.3 mA under a 1.8 V supply voltage.
- KSP 제안 키워드
- Conversion gain, Direct Conversion, Gilbert-cell, Low-voltage low-power, RF signal, RF system, Supply voltage, System-on-a-Chip, Transistor-level, Ultra-Wide Band(UWB), integrated RF