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A New Strained-Si Channel Power MOSFET for High Performance Applications
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- Authors
- Young Kyun Cho, Tae Moon Roh, Jong Dae Kim
- Issue Date
- 2006-04
- Citation
- ETRI Journal, v.28, no.2, pp.253-256
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Project Code
- 05MB2700, Set-up of Research Infra for IT fusion technology, Kim Jongdae
- Abstract
- We propose a novel power metal oxide semiconductor field effect transistor (MOSFET) employing a strained-Si channel structure to improve the current drivability and on-resistance characteristic of the high-voltage MOSFET. A 20 nm thick strained-Si law field channel NMOSFET with a 0.75 fan thick Si 0.8Ge0.2 buffer layer improved the drive current by 20% with a 25% reduction in on-resistance compared with a conventional Si channel high-voltage NMOSFET, while suppressing the breakdown voltage and subthreshold slope characteristic degradation by 6% and 8% respectively. Also, the strained-Si high-voltage NMOSFET improved the transconductance by 28% and 52% at the linear and saturation regimes.
- KSP Keywords
- 20 nm, Breakdown voltage(BDV), Buffer layer, Channel structure, Drive Current, Field-effect transistors(FETs), High performance, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), ON-resistance, Resistance characteristics