본 논문에서는 CMOS 0.18 μm 공정을 이용하여 DS-CDMA UWB용 고주파 VCO를 설계하고 제작하였다. 위상 잡음 특성을 좋게 하기 위해서 PMOS, NMOS 소자를 대칭으로 구성한 complementary cross-coupled LC 발진기 구조로 설계하였고, varactor를 이용하여 주파수를 조정하였다. 또한 전류원의 1/f 잡음 신호를 줄이기 위해 저항을 이용하여 전류원을 구성하였다. 스펙트럼 분석기를 이용한 측정을 위해 칩 내부에 고속 동작을 위한 인버터 버퍼를 추가로 설계하였다. 제작한 VCO의 core size는 340 μm×535 μm이고, 측정한 VCO의 위상 잡음은 1-MHz offset에서 -107 dBc/Hz의 특성을 나타내고, 주파수 조정 범위는 7.09~7.52 GHz의 특성을 보인다. Harmonic suppression은 32 dB, VCO core의 전류 소모는 1.8 V 공급 전압에서 2 mA의 저전력 소모를 나타내도록 설계하였다.
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