상세정보
학술지
Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors
- 발행일
- 200902
- 출처
- ETRI Journal, v.31 no.1, pp.62-64
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface. © 2009 ETRI.
- KSP 제안 키워드
- Charge trapping, Gate bias stress, Gate insulator, Photo-generated holes, Stability characteristics, Thin-Film Transistor(TFT), Visible light illumination, ZnO thin films, bias stability, thin film(TF)