BROWSE
Detail
Journal Article
Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors
- Authors
- Jae Heon Shin, Ji Su Lee, Chi Sun Hwang, Sang Hee Ko Park, Woo Seok Cheong, Min Ki Ryu, Chun Won Byun, Jeong Ik Lee, Hye Yong Chu
- Issue Date
- 2009-02
- Citation
- ETRI Journal, v.31, no.1, pp.62-64
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface. © 2009 ETRI.
- KSP Keywords
- Charge trapping, Gate bias stress, Gate insulator, Photo-generated holes, Stability characteristics, Thin-Film Transistor(TFT), Visible light illumination, ZnO thin films, bias stability, thin film(TF)