상세정보
학술지
40 Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Lasers Fabricated Using Selective Area Growth
- 발행일
- 200912
- 출처
- ETRI Journal, v.31 no.6, pp.765-769
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 08MB4100, 차세대 대용량 코히어런트 광OFDM 기술 개발, 남은수
- 초록
- In this paper, we present the fabrication of 40 Gb/s traveling-wave electroabsorption modulator-integrated laser (TW-EML) modules. A selective area growth method is first employed in 40 Gb/s EML fabrication to simultaneously provide active layers for lasers and modulators. The 3 dB bandwidth of a TW-EML module is measured to be 34 GHz, which is wider than that of a lumped EML module. The 40 Gb/s non-return-to-zero eye diagram shows clear openings with an average output power of +0.5 dBm. Copyright © 2009 ETRI.
- KSP 제안 키워드
- 3-dB bandwidth, 40 gb/s, Active Layer, DFB laser, Eye Diagram, Growth method, Integrated laser, Output power, Selective area growth, Traveling-wave electroabsorption modulator(TWEAM), electroabsorption modulator(EAM)