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Journal Article
40 Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Lasers Fabricated Using Selective Area Growth
- Authors
- Yong Hwan Kwon, Joong Seon Choe, Jae Sik Sim, Sung Bock Kim, Ho Gyeong Yun, Kwang Seong Choi, Byung Seok Choi, Eun Soo Nam
- Issue Date
- 2009-12
- Citation
- ETRI Journal, v.31, no.6, pp.765-769
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, we present the fabrication of 40 Gb/s traveling-wave electroabsorption modulator-integrated laser (TW-EML) modules. A selective area growth method is first employed in 40 Gb/s EML fabrication to simultaneously provide active layers for lasers and modulators. The 3 dB bandwidth of a TW-EML module is measured to be 34 GHz, which is wider than that of a lumped EML module. The 40 Gb/s non-return-to-zero eye diagram shows clear openings with an average output power of +0.5 dBm. Copyright © 2009 ETRI.
- KSP Keywords
- 3-dB bandwidth, 40 gb/s, Active Layer, DFB laser, Eye Diagram, Growth method, Integrated laser, Output power, Selective area growth, Traveling-wave electroabsorption modulator(TWEAM), electroabsorption modulator(EAM)