ETRI-Knowledge Sharing Plaform

KOREAN
논문 검색
Type SCI
Year ~ Keyword

Detail

Journal Article 40 Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Lasers Fabricated Using Selective Area Growth
Cited 15 time in scopus Download 7 time Share share facebook twitter linkedin kakaostory
Authors
Yong Hwan Kwon, Joong Seon Choe, Jae Sik Sim, Sung Bock Kim, Ho Gyeong Yun, Kwang Seong Choi, Byung Seok Choi, Eun Soo Nam
Issue Date
2009-12
Citation
ETRI Journal, v.31, no.6, pp.765-769
ISSN
1225-6463
Publisher
한국전자통신연구원 (ETRI)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.4218/etrij.09.1209.0039
Project Code
08MB4100, Coherent optical OFDM technologies for next generation optical transport networks, Eun Soo Nam
Abstract
In this paper, we present the fabrication of 40 Gb/s traveling-wave electroabsorption modulator-integrated laser (TW-EML) modules. A selective area growth method is first employed in 40 Gb/s EML fabrication to simultaneously provide active layers for lasers and modulators. The 3 dB bandwidth of a TW-EML module is measured to be 34 GHz, which is wider than that of a lumped EML module. The 40 Gb/s non-return-to-zero eye diagram shows clear openings with an average output power of +0.5 dBm. Copyright © 2009 ETRI.
KSP Keywords
3-dB bandwidth, 40 gb/s, Active Layer, DFB laser, Eye Diagram, Growth method, Integrated laser, Output power, Selective area growth, Traveling-wave electroabsorption modulator(TWEAM), electroabsorption modulator(EAM)