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학술지 40 Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Lasers Fabricated Using Selective Area Growth
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저자
권용환, 최중선, 심재식, 김성복, 윤호경, 최광성, 최병석, 남은수
발행일
200912
출처
ETRI Journal, v.31 no.6, pp.765-769
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.09.1209.0039
협약과제
08MB4100, 차세대 대용량 코히어런트 광OFDM 기술 개발, 남은수
초록
In this paper, we present the fabrication of 40 Gb/s traveling-wave electroabsorption modulator-integrated laser (TW-EML) modules. A selective area growth method is first employed in 40 Gb/s EML fabrication to simultaneously provide active layers for lasers and modulators. The 3 dB bandwidth of a TW-EML module is measured to be 34 GHz, which is wider than that of a lumped EML module. The 40 Gb/s non-return-to-zero eye diagram shows clear openings with an average output power of +0.5 dBm. Copyright © 2009 ETRI.
KSP 제안 키워드
3-dB bandwidth, 40 gb/s, Active Layer, DFB laser, Eye Diagram, Growth method, Integrated laser, Output power, Selective area growth, Traveling-wave electroabsorption modulator(TWEAM), electroabsorption modulator(EAM)