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학술지 Origin of the Dry Etch Damage in the Short-channel Oxide Thin-film Transistors for High Resolution Display Application
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저자
최지훈, 양종헌, 피재은, 황치영, 김희옥, 황치선
발행일
201903
출처
Thin Solid Films, v.674, pp.71-75
ISSN
0040-6090
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.tsf.2019.02.008
협약과제
17MF1200, 디지털 홀로그래픽 테이블탑형 단말 기술 개발, 김진웅
초록
The demand for high-resolution displays with fine pitch has been continuously increased. Source/drain (S/D) dry etching is indispensable when defining very narrow patterns, but back-channel damage is inevitable when it is carried out, which can lead to deterioration in the performance of devices made with them. Nevertheless, thorough analysis on the etch damage was not yet conducted in depth. In this study, the phenomenon and the reason of etch damage occurring in S/D dry etch procedure of back-channel-etched oxide thin-film transistors were evaluated. Right after S/D dry etching process, small amount of molybdenum (S/D metal) and chlorine (main etching gas) were detected on the back-channel surface. The changes in the chemical bonding state of the back-channel surface and the resulting degradation of device performance were examined in detail. Furthermore, a highly efficient wet treatment method was introduced to restore the etch damage. By doing so, all of the device characteristics were notably enhanced compared to a device not subjected to the wet treatment process.
KSP 제안 키워드
Chemical bonding state, Device characteristics, Etch damage, Etching process, Fine pitch, High-resolution displays, Short channel, Thin-Film Transistor(TFT), Treatment method, Treatment process, Wet treatment