상세정보
학술지
Design and Characterization of N-MCT with Low Vth Off-FET for High Current-drive Capability
- 발행일
- 202012
- 출처
- Journal of Semiconductor Technology and Science, v.20 no.6, pp.533-542
- ISSN
- 1598-1657
- 출판사
- 대한전자공학회 (IEIE)
- 협약과제
- 19VU1700, 국방 무기체계용 핵심 반도체 부품 자립화 플랫폼 개발, 임종원
- 초록
- In this paper, an N-MCT with a low threshold voltage of off-FET has been investigated by simulation and experiment. We have demonstrated the MCT with self-aligned spacer formation and recess process, which results in uniform off-FET channel length. And boron is implanted to adjust the threshold voltage of off-FETs. The threshold voltage of non-doped and proposed MCT was-1.2 V and 0.6 V, respectively. The forward blocking voltage of both MCTs was similar to 1800 V and the turn-on voltage of MCTs was 0.2 V and 0.75 V, respectively. The nondoped and proposed MCTs exhibit the same di/dt around 35.7 kA/?렡 and peak current of 2.69 kA. That is pointed out that this proposed MCT structure is promising because the current driving capability is improved without degradation of on-state characteristics.
- KSP 제안 키워드
- Blocking voltage, Channel Length, High current, Non-doped, Peak Current, Simulation and experiment, Turn-on voltage, driving capability, low threshold voltage, on-state characteristics, self-Aligned
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