상세정보
학술지
Effect of a P-doped Hole Transport and Charge Generation Layer on Single and Two-tandem Blue Top-emitting Organic Light-emitting Diodes
- 발행일
- 202106
- 출처
- Journal of Information Display, v.22 no.2, pp.107-113
- ISSN
- 1598-0316
- 출판사
- 한국정보디스플레이학회
- 협약과제
- 20PB2200, 수평분자 배열 극대화를 이용한 고효율/장수명 청색발광 소재‧소자 기술개발, 조현수
- 초록
- The transmittance of the p-doped hole transporting layer (p-HTL) and the charge generation layer (p-CGL) corresponding to the photoluminescence (PL) of blue dopants in an emitting layer decreases as the ratio of the p-dopant increases due to the absorption of the p-dopant. However, there was little difference in the luminous efficiency of blue top-emitting organic light-emitting diodes using p-HTL or p-CGL at a maximum doping ratio of 20%. p-HTL for a single structure required a 5% doping ratio to ensure sufficient electrical characteristics, but p-CGL for the two-stack tandem structure required more than a 10% doping ratio. The optical simulation showed that the device was affected by the specific absorbance of the p-dopant depending on the doping ratio and thickness. Although there was no significant difference in efficiency depending on the doping ratio at a thickness of 10 nm, the reduction rate of the external quantum efficiency increased from over 20 nm due to the doping ratio.
- KSP 제안 키워드
- 20 nm, Charge generation layer, Doping ratio, External Quantum Efficiency, Hole transporting layer, Luminous efficiency, Optical simulation, Organic light-emitting diodes(OLEDS), P-doped, Reduction rate, Tandem structure
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