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Journal Article
5G 이동통신을 위한 GaN RF 전자소자 및 집적회로 기술 동향
- Issue Date
- 2021-06
- Citation
- 전자통신동향분석, v.36, no.3, pp.53-64
- ISSN
- 1225-6455
- Publisher
- 한국전자통신연구원
- Language
- Korean
- Type
- Journal Article
- Abstract
- As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.
- KSP Keywords
- 28 GHz, 5G communications, 5G mobile communication, Communication services, Current status, Device characteristics, GaN HEMT, GaN power device, High electron mobility transistor(HEMT), High power, Key device
This work is distributed under the term of Korea Open Government License (KOGL)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
(Type 4: : Type 1 + Commercial Use Prohibition+Change Prohibition)
