상세정보
학술지
Analysis of issues in gate recess etching in the InAlAs/ InGaAs HEMT manufacturing process
- 발행일
- 202302
- 출처
- ETRI Journal, v.45 no.1, pp.171-179
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 21HB2900, 미세공정 화합물 반도체 기반 밀리미터파 대역 5G 부품기술 개발, 강동민
- 초록
- We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm??0.16 μm to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.
- KSP 제안 키워드
- 28 GHz, 94 GHz, AND gate, Citric acid, Etching conditions, Etching process, Frequency Range, Gate Foot, Gate recess, High electron mobility transistor(HEMT), Manufacturing processes
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