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Journal Article
Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors
- Authors
- Woo-Seok Cheong, Jonghyurk Park, Jae-Heon Shin
- Issue Date
- 2012-12
- Citation
- ETRI Journal, v.34, no.6, pp.966-969
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc- oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis. © 2012 ETRI.
- KSP Keywords
- Bias stress, Constant current(CC), Constant current stress, Effect of oxygen, Electrical stability, Indium gallium zinc oxide, O atoms, Positive bias, Spectroscopy analysis, Stress test, Thin-Film Transistor(TFT)