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학술지 A Compact C-Band 50 W AlGaN/GaN High-Power MMIC Amplifier for Radar Applications
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저자
정진철, 장동필, 한병곤, 염인복
발행일
201406
출처
ETRI Journal, v.36 no.3, pp.498-501
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.14.0213.0415
협약과제
14MR3100, 차기위성 Flexible 통신방송 탑재체 핵심기술 개발, 안재영
초록
A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-Array radar system was designed and fabricated using commercial 0.25 μm AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-Added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact 14.82 mm2 chip area, an output power density of 3.2 W/mm2 is demonstrated. © 2014 ETRI.
키워드
C-band, GaN, High power amplifier, Microwave monolithic integrated circuit, Power density, Saturated output power
KSP 제안 키워드
2 mm, 5 GHz, C-band, Chip area, Frequency Range, GaN technology, High power amplifier(HPA), High power microwave(HPM), Output power density, Phased Array Radar, Power added efficiency(PAE)