상세정보
학술지
A Compact C-Band 50 W AlGaN/GaN High-Power MMIC Amplifier for Radar Applications
- 발행일
- 201406
- 출처
- ETRI Journal, v.36 no.3, pp.498-501
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 14MR3100, 차기위성 Flexible 통신방송 탑재체 핵심기술 개발, 안재영
- 초록
- A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-Array radar system was designed and fabricated using commercial 0.25 μm AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-Added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact 14.82 mm2 chip area, an output power density of 3.2 W/mm2 is demonstrated. © 2014 ETRI.
- KSP 제안 키워드
- 2 mm, 5 GHz, C-band, Chip area, Frequency Range, GaN technology, High power microwave(HPM), Output power density, Phased Array Radar, Power added efficiency(PAE), Radar System