Subjects : Additive gas
Type | Year | Title | Cited | Download |
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Journal | 2011 | Etching characteristics and mechanism of Ga-doped ZnO thin films in inductively-coupled HBr/X (X = Ar, He, N2, O2) plasmas 함용현 Vacuum, v.85, no.11, pp.1021-1025 | 9 | 원문 |
Journal | 2008 | Model-Based Analysis of Plasma Parameters and Active Species Kinetics in Cl2/X (X=Ar, He, N2) Inductively Coupled Plasmas Alexander Efremov Journal of the Electrochemical Society, v.155, no.12, pp.D777-D782 | 72 | 원문 |
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Type | Year | Research Project | Primary Investigator | Download |
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