Subjects : Si-doped
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2024 | β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV Kyu Jun Cho Transactions on Electrical and Electronic Materials, v.25, no.3, pp.1-5 | 3 | 원문 |
| Journal | 2019 | 2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate Mun Jae Kyoung ECS Journal of Solid State Science and Technology, v.8, no.7, pp.3079-3082 | 120 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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