Subjects : semiconducting channel
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2011 | Nonvolatile Memory Thin-Film Transistors Using an Organic Ferroelectric Gate Insulator and an Oxide Semiconducting Channel Yoon Sung Min Semiconductor Science and Technology, v.26, no.3, pp.1-25 | 42 | 원문 |
| Journal | 2010 | Nonvolatile memory transistors using solution-processed zinc–tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene) Yoon Sung Min Organic Electronics, v.11, no.11, pp.1746-1752 | 18 | 원문 |
| Journal | 2009 | Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer Yoon Sung Min Journal of Physics D : Applied Physics, v.42, no.24, pp.1-6 | 32 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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