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Conference
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2021 |
Thermal and Electrical Reliability Analysis of TO-247 for Bonding Method, Substrate Structure and Heat Dissipation Bonding Material
Donghwan Kim Electronic Components and Technology Conference (ECTC) 2021, pp.1950-1956 |
5 |
원문
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Journal
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2021 |
Monolithic Growth of GaAs Laser Diodes on Si(001) by Optimal AlAs Nucleation with Thermal Cycle Annealing
Young-Ho Ko Optical Materials Express, v.11, no.3, pp.943-951 |
9 |
원문
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Journal
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2020 |
High quality GaAs epitaxially grown on Si(001) substrate through AlAs nucleation and thermal cycle annealing
Young-Ho Ko Solid-State Electronics, v.166, pp.1-5 |
5 |
원문
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Journal
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2008 |
Stress Reduction of Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> by Inhibiting Oxygen Diffusion
Park Young Sam Materials Transactions, v.49, no.9, pp.2107-2111 |
1 |
원문
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