Subjects : Metal-organic chemical vapour deposition (MOCVD)
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2004 | 1.55 [micro sign]m bottom-emitting InAlGaAs VCSELs with Al2O3∕a-Si thin-film pairs as top mirror Song Hyun Woo Electronics Letters, v.40, no.14, pp.868-869 | 4 | 원문 |
| Journal | 2003 | High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz Youn Doo Hyeb Electronics Letters, v.39, no.6, pp.566-567 | 15 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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