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Conference
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2024 |
High breakdown voltage, low specific on-resistance GaN on GaN PiN diodes with low contact resistance on p-type GaN for high power applications
Kim Donghan Materials Research Society (MRS) Meeting 2024 (Spring), pp.1-2 |
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Conference
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2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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Journal
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2013 |
Effects of Two-Step Mg Doping in p-GaN on Efficiency Characteristics of InGaN Blue Light-Emitting Diodes without AlGaN Electron-Blocking Layers
류한열 Applied Physics Letters, v.102, no.18, pp.1-4 |
25 |
원문
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Journal
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2002 |
Microstructure and Electrical Properties of Low Temperature Processed Ohmic Contacts to p-Type GaN
Miran Park ETRI Journal, v.24, no.5, pp.349-359 |
11 |
원문
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