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Journal
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2023 |
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
Jeonggil Kim Micromachines, v.14, no.6, pp.1-10 |
5 |
원문
|
|
Journal
|
2023 |
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
이준혁 Micromachines, v.14, no.6, pp.1-10 |
5 |
원문
|
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Journal
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2019 |
GaN MIS-HEMT PA MMICs for 5G Mobile Devices
Kim Seong-Il Journal of the Korean Physical Society, v.74, no.2, pp.196-200 |
5 |
원문
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Conference
|
2016 |
Common-Source Inductance Reduction in GaN Cascode FET for High- Speed Switching and High-Efficiency Operation
Woojin Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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