Subjects : diode ideality
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2017 | Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 | 2 | 원문 |
| Journal | 2015 | DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2 Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657 | 3 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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