Subjects : DC measurements
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2016 | Dependence of GaN Channel Thickness on the Transistor Characteristics of AlGaN/GaN HEMTs Grown on Sapphire Sungjae Chang ECS Journal of Solid State Science and Technology, v.5, no.12, pp.N102-N107 | 6 | 원문 |
| Conference | 2016 | GaN HEMT Modeling for X-band Applications Kim Seong-Il 대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560 | ||
| Conference | 2016 | Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate Jongmin Lee 한국 반도체 학술 대회 (KCS) 2016, pp.1-2 |
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| Type | Year | Research Project | Primary Investigator | Download |
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