Subjects : Inductively coupled plasma-reactive ion etching (ICP-RIE)
| Type | Year | Title | Cited | Download |
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| Journal | 2024 | Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode Lee Hun Ki JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.42, no.4, pp.1-10 | 2 | 원문 |
| Conference | 2014 | Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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