Subjects :
current collapse
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
|
Journal
|
2018 |
High Figure-of-Merit (V 2 BR /R ON ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier
이준혁 IEEE Journal of the Electron Devices Society, v.6, pp.1179-1186 |
41 |
원문
|
|
Journal
|
2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
|
|
Journal
|
2015 |
Al2O3 Surface Passivation and MOS-Gate Fabrication on AlGaN/GaN High-Electron-Mobility Transistors without Al2O3 Etching Process
Kim Jeong-Jin Japanese Journal of Applied Physics, v.54, no.3, pp.1-3 |
1 |
원문
|
|
Journal
|
2012 |
Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jongmin Lee Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106 |
1 |
원문
|
특허 검색결과
| Status |
Year |
Patent Name |
Country |
Family Pat. |
KIPRIS |
|
No search results. |
연구보고서 검색결과
| Type |
Year |
Research Project |
Primary Investigator |
Download |
|
No search results. |