Subjects : Semiconductor/dielectric interface
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2018 | Comparison of Trapped Charges and Hysteresis Behavior in hBN Encapsulated Single MoS2 Flake based Field Effect Transistors on SiO2 and hBN Substrates 이창희 Nanotechnology, v.29, no.33, pp.1-8 | 98 | 원문 |
| Journal | 2012 | Remarkable Enhancement of Hole Transport in Top‐Gated N‐Type Polymer Field‐Effect Transistors by a High‐k Dielectric for Ambipolar Electronic Circuits Kang-Jun Baeg Advanced Materials, v.24, no.40, pp.5433-5439 | 186 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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