Subjects : Total ionizing dose effects
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2020 | Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Sungjae Chang Nanomaterials, v.10, no.11, pp.1-11 | 13 | 원문 |
| Conference | 2016 | Total Ionizing Dose Effects on GaN-based HEMTs and MOSHEMTs: Effects of Channel Thickness and Epitaxial MgCaO as Gate Dielectric M. Bhuiyan Semiconductor Interface Specialists Conference (SISC) 2016, pp.1-2 |
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