Subjects : Pre-passivation
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2006 | Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer Jong-Won Lim Journal of the Korean Physical Society, v.49, no.3, pp.S774-S779 | ||
| Conference | 2006 | Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer Jong-Won Lim 한국반도체 학술 대회 (KCS) 2006, pp.1-2 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
|---|---|---|---|---|---|
| No search results. | |||||
| Type | Year | Research Project | Primary Investigator | Download |
|---|---|---|---|---|
| No search results. | ||||