Subjects :
Forward and reverse
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
|
Journal
|
2018 |
High Performance Self-gating Graphene/MoS2 Diode Enabled by Asymmetric Contacts
무하마드칸 Nanotechnology, v.29, no.39, pp.1-6 |
8 |
원문
|
|
Journal
|
2018 |
Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2
무하마드 칸 Chemistry of Materials, v.30, no.3, pp.1011-1016 |
24 |
원문
|
|
Journal
|
2017 |
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
Lee Hyun Soo Journal of Semiconductor Technology and Science, v.17, no.3, pp.354-362 |
1 |
원문
|
|
Conference
|
2015 |
Photoelectric Characteristics of Schottky Diode Based on a Ge/Si Core/Shell Nanowire
Suh Dongwoo International Conference on Sensing Technology (ICST) 2015, pp.199-202 |
1 |
원문
|
특허 검색결과
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Family Pat. |
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연구보고서 검색결과
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