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Journal
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2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
원문
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Journal
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2015 |
Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning
Cho Sung Haeng IEEE Transactions on Electron Devices, v.62, no.11, pp.3653-3657 |
38 |
원문
|
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Journal
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2004 |
전계방출소자의 표면처리가 능동구동형캐소드의 전기적 특성에 미치는 영향
Choong-Heui Chung Thin Solid Films, v.460, no.1-2, pp.201-205 |
0 |
원문
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