Subjects : Gate fabrication
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2023 | Optimized recess etching criteria for T-gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel Jong Yul Park Electronics Letters, v.59, no.14, pp.1-3 | 2 | 원문 |
| Journal | 2015 | Al2O3 Surface Passivation and MOS-Gate Fabrication on AlGaN/GaN High-Electron-Mobility Transistors without Al2O3 Etching Process Kim Jeong-Jin Japanese Journal of Applied Physics, v.54, no.3, pp.1-3 | 1 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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