Subjects : Metal-ferroelectric-insulator-semiconductor
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2022 | Improvement in nonvolatile memory operations for metal-ferroelectric-insulator-semiconductor capacitors using HfZrO2 and ZrO2 thin films as ferroelectric and insulator layers Yeriaron Kim Journal of Physics D : Applied Physics, v.55, no.33, pp.1-9 | 1 | 원문 |
| Journal | 2009 | Low Voltage Operation of Nonvolatile Ferroelectric Capacitors Using Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer and Thin Al2O3 Insulating Layer Soon-Won Jung Electrochemical and Solid-State Letters, v.12, no.9, pp.H325-H328 | 12 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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