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Journal
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2022 |
Effects of DC and AC Stress on the VT Shift of AlGaN/GaN MIS-HEMTs
Kang Soo Cheol Current Applied Physics, v.39, pp.128-132 |
1 |
원문
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Journal
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2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9 |
5 |
원문
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Conference
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2011 |
Electrical Characteristics of High Voltage TDMOS using Recess Gate Process
Yoo Seong Wook International Conference on Advanced Electromaterials (ICAE) 2011, pp.1-1 |
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