|
Journal
|
2018 |
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
손동혁 Solid-State Electronics, v.141, pp.7-12 |
9 |
원문
|
|
Journal
|
2018 |
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
조영우 Solid-State Electronics, v.141, pp.7-12 |
9 |
원문
|
|
Journal
|
2015 |
Al2O3 Surface Passivation and MOS-Gate Fabrication on AlGaN/GaN High-Electron-Mobility Transistors without Al2O3 Etching Process
Kim Jeong-Jin Japanese Journal of Applied Physics, v.54, no.3, pp.1-3 |
1 |
원문
|